{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,22]],"date-time":"2024-10-22T20:27:47Z","timestamp":1729628867458,"version":"3.28.0"},"reference-count":22,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,8]]},"DOI":"10.1109\/3dic.2015.7334612","type":"proceedings-article","created":{"date-parts":[[2015,11,23]],"date-time":"2015-11-23T17:46:57Z","timestamp":1448300817000},"page":"TS8.7.1-TS8.7.5","source":"Crossref","is-referenced-by-count":0,"title":["Air-gap\/SiO<inf>2<\/inf> liner TSVs with improved electrical performance"],"prefix":"10.1109","author":[{"family":"Cui Huang","sequence":"first","affiliation":[]},{"family":"Dong Wu","sequence":"additional","affiliation":[]},{"family":"Liyang Pan","sequence":"additional","affiliation":[]},{"family":"Zheyao Wang","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/ECTC.2010.5490748"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TCPMT.2011.2125791"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TSM.2012.2236369"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/ECTC.2010.5490837"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/3DIC.2010.5751482"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2244895"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/ECTC.2012.6249115"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TCPMT.2013.2265211"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2012.06.001"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2111351"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2291297"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2010.2074070"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2011.06.003"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2010.2068572"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2012.2194784"},{"key":"ref7","first-page":"1130","article-title":"Effects of etch rate on scallop of through-silicon vias (TSVs) in 200mm and 300mm wafers","author":"hsin","year":"2010","journal-title":"IEEE ECTC"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2046712"},{"key":"ref1","doi-asserted-by":"crossref","first-page":"181","DOI":"10.1109\/TCPMT.2010.2101890","article-title":"High-frequency scalable electrical model and analysis of a TSV","volume":"1","author":"kim","year":"2011","journal-title":"IEEE Trans Comp Packag Manuf Tech"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TCPMT.2011.2114885"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2141650"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2014.2386322"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/IITC.2010.5510311"}],"event":{"name":"2015 International 3D Systems Integration Conference (3DIC)","start":{"date-parts":[[2015,8,31]]},"location":"Sendai, Japan","end":{"date-parts":[[2015,9,2]]}},"container-title":["2015 International 3D Systems Integration Conference (3DIC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7328029\/7334459\/07334612.pdf?arnumber=7334612","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,23]],"date-time":"2017-06-23T20:14:25Z","timestamp":1498248865000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7334612\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,8]]},"references-count":22,"URL":"https:\/\/doi.org\/10.1109\/3dic.2015.7334612","relation":{},"subject":[],"published":{"date-parts":[[2015,8]]}}}