{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,29]],"date-time":"2024-10-29T10:52:12Z","timestamp":1730199132060,"version":"3.28.0"},"reference-count":7,"publisher":"IEEE","license":[{"start":{"date-parts":[[2023,11,5]],"date-time":"2023-11-05T00:00:00Z","timestamp":1699142400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2023,11,5]],"date-time":"2023-11-05T00:00:00Z","timestamp":1699142400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2023,11,5]]},"DOI":"10.1109\/a-sscc58667.2023.10347955","type":"proceedings-article","created":{"date-parts":[[2023,12,18]],"date-time":"2023-12-18T19:25:44Z","timestamp":1702927544000},"page":"1-3","source":"Crossref","is-referenced-by-count":0,"title":["A Hybrid Integrated W-Band 4-Element Phased-Array Transceiver Front-End Achieving 21.6% Full TX Peak PAE at 14.8dBm Output Power and &lt;1\u00b0\/dB Phase\/Gain Resolution in 65-nm CMOS Technology"],"prefix":"10.1109","author":[{"given":"Wei","family":"Zhu","sequence":"first","affiliation":[{"name":"School of Integrated Circuits and Electronics, Beijing Institute of Technology,Beljing,China"}]},{"given":"Jian","family":"Zhang","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics of Tsinghua University,Beijing,China"}]},{"given":"Jiazhi","family":"Ying","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits and Electronics, Beijing Institute of Technology,Beljing,China"}]},{"given":"Xiangjie","family":"Yi","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics of Tsinghua University,Beijing,China"}]},{"given":"Yan","family":"Wang","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics of Tsinghua University,Beijing,China"}]},{"given":"Houjun","family":"Sun","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits and Electronics, Beijing Institute of Technology,Beljing,China"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2017.2675907"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2019.2928694"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2017.2713528"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2018.2856254"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2015.2422691"},{"issue":"9","key":"ref6","first-page":"2685","article-title":"W-band Scalable $2\\times 2$ Phased-Array Transmitter and Receiver Chipsets in SiGe BiCMOS for High Data-Rate Communication","volume":"57","author":"Li","year":"2022","journal-title":"JSSC"},{"key":"ref7","first-page":"226","article-title":"A 1V W-Band Bidirectional Transceiver Front-End with <1 dB T\/R Switch Loss, <1\u00b0\/dB Phase\/Gain Resolution and 12.3% TX PAE at 15.1dBm Output Power in 65nm CMOS Technology","volume-title":"ISSCC","author":"Zhu","year":"2021"}],"event":{"name":"2023 IEEE Asian Solid-State Circuits Conference (A-SSCC)","start":{"date-parts":[[2023,11,5]]},"location":"Haikou, China","end":{"date-parts":[[2023,11,8]]}},"container-title":["2023 IEEE Asian Solid-State Circuits Conference (A-SSCC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10347557\/10347908\/10347955.pdf?arnumber=10347955","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,1,12]],"date-time":"2024-01-12T02:56:57Z","timestamp":1705028217000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10347955\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,11,5]]},"references-count":7,"URL":"https:\/\/doi.org\/10.1109\/a-sscc58667.2023.10347955","relation":{},"subject":[],"published":{"date-parts":[[2023,11,5]]}}}