{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,26]],"date-time":"2025-11-26T16:27:14Z","timestamp":1764174434084,"version":"3.37.3"},"reference-count":16,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2018,1,1]],"date-time":"2018-01-01T00:00:00Z","timestamp":1514764800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/OAPA.html"}],"funder":[{"DOI":"10.13039\/501100001809","name":"Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61404022","61774028"],"award-info":[{"award-number":["61404022","61774028"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Science and Technology on Analog Integrated Circuit Laboratory Foundation","award":["0C09YJTJ1603"],"award-info":[{"award-number":["0C09YJTJ1603"]}]},{"name":"Fundamental Research Funds for the China Central Universities","award":["ZYGX2016Z007"],"award-info":[{"award-number":["ZYGX2016Z007"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2018]]},"DOI":"10.1109\/access.2018.2797242","type":"journal-article","created":{"date-parts":[[2018,1,24]],"date-time":"2018-01-24T14:20:46Z","timestamp":1516803646000},"page":"7037-7043","source":"Crossref","is-referenced-by-count":6,"title":["The Effects of Comparator Dynamic Capacitor Mismatch in SAR ADC and Correction"],"prefix":"10.1109","volume":"6","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-6738-7199","authenticated-orcid":false,"given":"Jian","family":"Luo","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jing","family":"Li","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ning","family":"Ning","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0615-7036","authenticated-orcid":false,"given":"Yang","family":"Liu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Qi","family":"Yu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2012.6330694"},{"key":"ref11","first-page":"268c","article-title":"A 2.1 mW 11b 410 MS\/s dynamic pipelined SAR ADC with background calibration in 28 nm digital CMOS","author":"verbruggen","year":"2013","journal-title":"IEEE Symp VLSI Circuits Dig Tech Papers"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2016.2570318"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2016.7538972"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1007\/s10470-016-0916-9"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2006.875308"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2016.2563698"},{"key":"ref4","first-page":"476","article-title":"A 78.5 dB-SNDR radiation- and metastability-tolerant two-step split SAR ADC operating up to 75 MS\/s with 24.9 mW power consumption in 65 nm CMOS","author":"xu","year":"2017","journal-title":"Proc IEEE Solid-State Circuits Conf"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2014.2384025"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2013.2242501"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2015.2452331"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2016.2580703"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2016.2548486"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/ESSCIRC.2013.6649084"},{"key":"ref1","first-page":"413","article-title":"A 10-b 750 \n$\\mu \\text{W}$\n 200 MS\/s fully dynamic single-channel SAR ADC in 40 nm CMOS","author":"tang","year":"2016","journal-title":"Proc Eur Solid-State Circuits Conf"},{"journal-title":"Operation and Modeling of the MOS Transistor","year":"1987","author":"tsividis","key":"ref9"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/8274985\/08268117.pdf?arnumber=8268117","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T11:39:43Z","timestamp":1641987583000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/8268117\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018]]},"references-count":16,"URL":"https:\/\/doi.org\/10.1109\/access.2018.2797242","relation":{},"ISSN":["2169-3536"],"issn-type":[{"type":"electronic","value":"2169-3536"}],"subject":[],"published":{"date-parts":[[2018]]}}}