{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,19]],"date-time":"2025-09-19T08:53:59Z","timestamp":1758272039989,"version":"3.37.3"},"reference-count":27,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2019,1,1]],"date-time":"2019-01-01T00:00:00Z","timestamp":1546300800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/OAPA.html"}],"funder":[{"DOI":"10.13039\/501100012166","name":"National Key Research and Development Program of China","doi-asserted-by":"crossref","award":["2018FYB0905800"],"award-info":[{"award-number":["2018FYB0905800"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"crossref"}]},{"DOI":"10.13039\/501100013160","name":"Venture and Innovation Support Program for Chongqing Overseas Returnees","doi-asserted-by":"crossref","award":["CX2018045"],"award-info":[{"award-number":["CX2018045"]}],"id":[{"id":"10.13039\/501100013160","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2019]]},"DOI":"10.1109\/access.2018.2890022","type":"journal-article","created":{"date-parts":[[2019,1,4]],"date-time":"2019-01-04T14:46:10Z","timestamp":1546613170000},"page":"6510-6518","source":"Crossref","is-referenced-by-count":5,"title":["Analysis and Modeling for the Real-Time Condition Evaluating of MOSFET Power Device Using Adaptive Neuro-Fuzzy Inference System"],"prefix":"10.1109","volume":"7","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-6192-9508","authenticated-orcid":false,"given":"Shengyou","family":"Xu","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xin","family":"Yang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Minyou","family":"Chen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8418-3964","authenticated-orcid":false,"given":"Wei","family":"Lai","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yueyue","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Li","family":"Ran","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2323152"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2205659"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2016.2602323"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2010.5617886"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1049\/cp.2016.0267"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2014.2361674"},{"key":"ref16","doi-asserted-by":"crossref","first-page":"1168","DOI":"10.1109\/TIE.2015.2497665","article-title":"Real-time aging monitoring for IGBT modules using case temperature","volume":"63","author":"tian","year":"2016","journal-title":"IEEE Trans Ind Electron"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2010.2077613"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2014.2330075"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/IMPACT.2013.6706684"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2283509"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1016\/j.fss.2012.01.005"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2283245"},{"key":"ref6","first-page":"441","article-title":"Real-time aging monitoring for power MOSFETs using threshold voltage","author":"ren","year":"2016","journal-title":"Proc 42nd Annu Conf IEEE Ind Electron Soc"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2013.2292547"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2008.921388"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/APEC.2017.7931211"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1049\/iet-pel.2015.0225"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2015.2501540"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2015.2477831"},{"key":"ref20","first-page":"3240","article-title":"Prediction of case temperature for monitoring IGBT power module using artificial neural network","volume":"7","author":"chen","year":"2012","journal-title":"Int Rev Elect Eng"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2011.2124436"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2010.2049377"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2012.6342217"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2011.6064129"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1016\/j.neunet.2011.07.006"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2017.2694548"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/8600701\/08601194.pdf?arnumber=8601194","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T11:37:36Z","timestamp":1641987456000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8601194\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019]]},"references-count":27,"URL":"https:\/\/doi.org\/10.1109\/access.2018.2890022","relation":{},"ISSN":["2169-3536"],"issn-type":[{"type":"electronic","value":"2169-3536"}],"subject":[],"published":{"date-parts":[[2019]]}}}