{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,2]],"date-time":"2025-11-02T20:03:03Z","timestamp":1762113783822,"version":"3.37.3"},"reference-count":47,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2019,1,1]],"date-time":"2019-01-01T00:00:00Z","timestamp":1546300800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/OAPA.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2019]]},"DOI":"10.1109\/access.2019.2918187","type":"journal-article","created":{"date-parts":[[2019,5,22]],"date-time":"2019-05-22T16:04:23Z","timestamp":1558541063000},"page":"76868-76877","source":"Crossref","is-referenced-by-count":12,"title":["A Large-Signal Model for Two-Dimensional Hole Gas Diamond MOSFET Based on the QPZD"],"prefix":"10.1109","volume":"7","author":[{"given":"Yu","family":"Fu","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ruimin","family":"Xu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jianjun","family":"Zhou","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xinxin","family":"Yu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhang","family":"Wen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yuechan","family":"Kong","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Tangsheng","family":"Chen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yong","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bo","family":"Yan","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jijun","family":"He","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1706-2681","authenticated-orcid":false,"given":"Yuehang","family":"Xu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1063\/1.116690"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.201600407"},{"key":"ref33","doi-asserted-by":"crossref","first-page":"2031","DOI":"10.1016\/j.diamond.2004.06.028","article-title":"Electronic properties of the 2D-hole accumulation layer on hydrogen terminated diamond","volume":"13","author":"nebel","year":"2006","journal-title":"Diamond Rel Mater"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.51.090111"},{"key":"ref31","doi-asserted-by":"crossref","first-page":"1854","DOI":"10.1109\/T-ED.1984.21801","article-title":"dc and microwave models for al<inf>x<\/inf>ga<inf>1-x<\/inf>as\/gaas high electron mobility transistors","volume":"31","author":"weiler","year":"1984","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref30","first-page":"1425","article-title":"Harmonic balance simulation of a new physics based model of the AlGaN\/GaN HFET","author":"yin","year":"2008","journal-title":"IEEE MTT-S Int Microw Symp Dig"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2794460"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1063\/1.124214"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1986.22549"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1002\/0470863803"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2870668"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2015.2388706"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1016\/j.diamond.2012.03.010"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2283525"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2017.2775639"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838341"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2007.380058"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2227323"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2017.2765326"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1002\/pssr.201700401"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.56.100301"},{"key":"ref28","doi-asserted-by":"crossref","first-page":"292","DOI":"10.1109\/EDL.1982.25573","article-title":"mobility degradation due to the gate field in the inversion layer of mosfet's","volume":"3","author":"fu","year":"1982","journal-title":"IEEE Electron Device Letters"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2661340"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1984.21721"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268458"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2862158"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.55.041301"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2392798"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.200671401"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2886596"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2007.4419088"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.85.3472"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1126\/science.1074374"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2014.2364821"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.29.824"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1002\/jnm.2620"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/INMMIC.2014.6815102"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1016\/j.diamond.2009.01.020"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2016.7520883"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1016\/j.diamond.2004.12.002"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2695495"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1149\/2.0441712jss"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/HKEDM.1997.642325"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1002\/jnm.2137"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1016\/j.diamond.2009.07.006"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1016\/j.diamond.2005.12.025"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2617362"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/8600701\/08719996.pdf?arnumber=8719996","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T11:54:35Z","timestamp":1641988475000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8719996\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019]]},"references-count":47,"URL":"https:\/\/doi.org\/10.1109\/access.2019.2918187","relation":{},"ISSN":["2169-3536"],"issn-type":[{"type":"electronic","value":"2169-3536"}],"subject":[],"published":{"date-parts":[[2019]]}}}