{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T20:18:42Z","timestamp":1740169122630,"version":"3.37.3"},"reference-count":22,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2019,1,1]],"date-time":"2019-01-01T00:00:00Z","timestamp":1546300800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/legalcode"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61774052"],"award-info":[{"award-number":["61774052"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Science and Technology on Analog Integrated Circuit Laboratory","award":["6142802180507"],"award-info":[{"award-number":["6142802180507"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2019]]},"DOI":"10.1109\/access.2019.2927231","type":"journal-article","created":{"date-parts":[[2019,7,12]],"date-time":"2019-07-12T16:10:09Z","timestamp":1562947809000},"page":"95710-95715","source":"Crossref","is-referenced-by-count":4,"title":["An Improved 4H-SiC Trench MOS Barrier Schottky Diode With Lower On-Resistance"],"prefix":"10.1109","volume":"7","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-8089-3416","authenticated-orcid":false,"given":"Fei","family":"Cao","sequence":"first","affiliation":[]},{"given":"Meng-tian","family":"Bao","sequence":"additional","affiliation":[]},{"given":"Xue","family":"Wu","sequence":"additional","affiliation":[]},{"given":"Wen-Ju","family":"Wang","sequence":"additional","affiliation":[]},{"given":"Cheng-Hao","family":"Yu","sequence":"additional","affiliation":[]},{"given":"Ying","family":"Wang","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2011.6131619"},{"key":"ref11","doi-asserted-by":"crossref","first-page":"428","DOI":"10.7471\/ikeee.2013.17.4.428","article-title":"A 4H-SiC trench MOS barrier Schottky (TMBS) rectifier using the trapezoid mesa and the upper half of sidewall","volume":"17","author":"byung-soo","year":"2013","journal-title":"Journal of IKEEE"},{"key":"ref12","first-page":"171","article-title":"A novel 4H-SiC trench MOS barrier Schottky rectifier fabricated by a two-mask process","author":"lee","year":"2013","journal-title":"Proc 25th Int Symp Power Semiconductor Devices IC’s"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2871066"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.48.116508"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.740-742.691"},{"journal-title":"Atlas User s Manual Device Simulation Software","year":"2016","key":"ref16"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1007\/978-0-387-75589-2"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2008.926638"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1007\/978-0-387-47314-7"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/16.992877"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2012.6342436"},{"key":"ref6","doi-asserted-by":"crossref","first-page":"101","DOI":"10.1109\/ISPSD.2000.856782","article-title":"1500 V, 4 amp 4H-Sic JBS diodes","author":"singh","year":"2000","journal-title":"Proc Int Symp Power Semiconductor Devices ICs"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2320979"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.56.121301"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1049\/el:20020947"},{"key":"ref2","first-page":"1","article-title":"JBS power-rectifiers for 1.7 kV applications with conduction properties close to pure Schottky-design","author":"bartolf","year":"2015","journal-title":"Proc 17th Eur Conf Power Electron Appl (EPE ECCE-Eur )"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2019.2921970"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.740-742.781"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/16.930664"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1063\/1.4997599"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/55.919232"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/8600701\/08756140.pdf?arnumber=8756140","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,8,10]],"date-time":"2021-08-10T19:40:13Z","timestamp":1628624413000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8756140\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019]]},"references-count":22,"URL":"https:\/\/doi.org\/10.1109\/access.2019.2927231","relation":{},"ISSN":["2169-3536"],"issn-type":[{"type":"electronic","value":"2169-3536"}],"subject":[],"published":{"date-parts":[[2019]]}}}