{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,11]],"date-time":"2026-02-11T19:17:55Z","timestamp":1770837475358,"version":"3.50.1"},"reference-count":36,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2019,1,1]],"date-time":"2019-01-01T00:00:00Z","timestamp":1546300800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/legalcode"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61574023"],"award-info":[{"award-number":["61574023"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Science and Technology on Analogue Integrated Circuit Laboratory","award":["6142802180508"],"award-info":[{"award-number":["6142802180508"]}]},{"name":"Innovation Foundation of Radiation Application","award":["KFZC2018040207"],"award-info":[{"award-number":["KFZC2018040207"]}]},{"DOI":"10.13039\/501100002663","name":"Northwestern Polytechnical University","doi-asserted-by":"publisher","award":["2018CDXYTX0008"],"award-info":[{"award-number":["2018CDXYTX0008"]}],"id":[{"id":"10.13039\/501100002663","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2019]]},"DOI":"10.1109\/access.2019.2944991","type":"journal-article","created":{"date-parts":[[2019,10,2]],"date-time":"2019-10-02T19:49:38Z","timestamp":1570045778000},"page":"145118-145123","source":"Crossref","is-referenced-by-count":13,"title":["An Investigation of Electric Field and Breakdown Voltage Models for a Deep Trench Superjunction SiC VDMOS"],"prefix":"10.1109","volume":"7","author":[{"given":"Tao","family":"Liu","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5838-4444","authenticated-orcid":false,"given":"Shengdong","family":"Hu","sequence":"additional","affiliation":[]},{"given":"Jian'an","family":"Wang","sequence":"additional","affiliation":[]},{"given":"Gang","family":"Guo","sequence":"additional","affiliation":[]},{"given":"Jun","family":"Luo","sequence":"additional","affiliation":[]},{"given":"Yuan","family":"Wang","sequence":"additional","affiliation":[]},{"given":"Jingwei","family":"Guo","sequence":"additional","affiliation":[]},{"given":"Yanmeng","family":"Huo","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2016.7520820"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2014.6856047"},{"key":"ref31","first-page":"1","article-title":"Design of GaN and SiC 5–20kV vertical superjunction structures","author":"li","year":"2012","journal-title":"Proc Lester Eastman Conf High Performance Devices"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2008.926648"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1063\/1.119478"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2032595"},{"key":"ref34","first-page":"483","article-title":"0.97 \n$\\text{m}\\Omega$\ncm2\/820 V 4H-SiC super junction V-groove trench MOSFET","author":"masuda","year":"2017","journal-title":"Proc Eur Conf Silicon Carbide Rel Mater"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2723502"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/55.735755"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2005.845495"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2011.6131619"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2013.6694394"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2449972"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2520464"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2542183"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2599921"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2017.2694220"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2658344"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.24295\/CPSSTPEA.2017.00012"},{"key":"ref27","first-page":"243","article-title":"Optimum doping profile for minimum ohmic resistance and high-breakdown voltage","volume":"ed 26","author":"hu","year":"1979","journal-title":"IEEE Trans Electron Devices"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2018.2885023"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2533432"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2003.812561"},{"key":"ref5","first-page":"85","article-title":"The optimised design and characterization of 1200V\/2.0 \n$\\text{m}\\Omega$\n cm\n$^{2}~4\\text{H}$\n-SiC V-groove trench MOSFETs","author":"uchida","year":"2015","journal-title":"Proc IEEE 27th Int Symp Power Semiconductor Devices IC’s (ISPSD)"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2019.2902246"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1049\/iet-pel.2015.0600"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2017.2776898"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2779482"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2008.926650"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2697763"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1985.21900"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2755721"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1007\/s10825-019-01318-2"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2653239"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2076406"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/16.902737"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/8600701\/08854806.pdf?arnumber=8854806","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,8,10]],"date-time":"2021-08-10T19:40:28Z","timestamp":1628624428000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8854806\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019]]},"references-count":36,"URL":"https:\/\/doi.org\/10.1109\/access.2019.2944991","relation":{},"ISSN":["2169-3536"],"issn-type":[{"value":"2169-3536","type":"electronic"}],"subject":[],"published":{"date-parts":[[2019]]}}}