{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T20:18:32Z","timestamp":1740169112504,"version":"3.37.3"},"reference-count":30,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2019,1,1]],"date-time":"2019-01-01T00:00:00Z","timestamp":1546300800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/legalcode"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61832007"],"award-info":[{"award-number":["61832007"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"National Key R&D Program of China","award":["2018YFB1003304"],"award-info":[{"award-number":["2018YFB1003304"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2019]]},"DOI":"10.1109\/access.2019.2946213","type":"journal-article","created":{"date-parts":[[2019,10,8]],"date-time":"2019-10-08T19:56:07Z","timestamp":1570564567000},"page":"149255-149261","source":"Crossref","is-referenced-by-count":4,"title":["Single Event Transient Study of pMOS Transistors in 65 nm Technology With and Without a Deep n+ Well Under Particle Striking"],"prefix":"10.1109","volume":"7","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-3514-9035","authenticated-orcid":false,"given":"Jizuo","family":"Zhang","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Liang","family":"Fang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jianjun","family":"Chen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7525-2825","authenticated-orcid":false,"given":"Shen","family":"Hou","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xianyu","family":"Tong","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1007\/s41365-018-0391-3"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2010.2102354"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2014.2305434"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2007.907754"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2008.2005831"},{"key":"ref14","first-page":"478","article-title":"Basic MOS device physics","author":"razavi","year":"2013","journal-title":"Design of Analog CMOS Integrated Circuits"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1007\/s11431-015-5906-0"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2017.2672820"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2018.2823273"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2018.2797074"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2015.2469740"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2018.2796622"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1007\/s11431-012-4753-5"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2017.2780120"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2012.2212457"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2012.2191971"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2006.885589"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2013.2290032"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2006.884788"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2012.2227261"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1007\/s11431-012-5070-8"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2010.2076836"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2013.2255624"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2018.2851366"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2011.12.002"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1007\/s11431-015-5999-5"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1038\/srep32003"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1007\/s11432-015-5471-y"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1063\/1.3524186"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1038\/s41598-018-22909-2"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/8600701\/08862954.pdf?arnumber=8862954","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,8,10]],"date-time":"2021-08-10T19:40:56Z","timestamp":1628624456000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8862954\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019]]},"references-count":30,"URL":"https:\/\/doi.org\/10.1109\/access.2019.2946213","relation":{},"ISSN":["2169-3536"],"issn-type":[{"type":"electronic","value":"2169-3536"}],"subject":[],"published":{"date-parts":[[2019]]}}}