{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,28]],"date-time":"2026-01-28T07:15:16Z","timestamp":1769584516226,"version":"3.49.0"},"reference-count":35,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2020,1,1]],"date-time":"2020-01-01T00:00:00Z","timestamp":1577836800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/legalcode"}],"funder":[{"name":"Singapore Ministry of Education Tier 2 Research","award":["MOE2016-T2-2-102"],"award-info":[{"award-number":["MOE2016-T2-2-102"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2020]]},"DOI":"10.1109\/access.2020.2966577","type":"journal-article","created":{"date-parts":[[2020,1,14]],"date-time":"2020-01-14T21:08:33Z","timestamp":1579036113000},"page":"14048-14053","source":"Crossref","is-referenced-by-count":4,"title":["Alteration of Gate-Oxide Trap Capture\/Emission Time Constants by Channel Hot-Carrier Effect in the Metal-Oxide-Semiconductor Field-Effect Transistor"],"prefix":"10.1109","volume":"8","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-2742-3719","authenticated-orcid":false,"given":"Xin","family":"Ju","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Diing Shenp","family":"Ang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2017.12.021"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1016\/j.physb.2017.12.056"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.83.372"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1088\/0034-4885\/69\/2\/R02"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.55.13783"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1149\/1.3572280"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2011.6131656"},{"key":"ref11","first-page":"139","article-title":"New insights into AC RTN in scaled high-\n$\\kappa$\n\/metal-gate MOSFETs under digital circuit operations","author":"zou","year":"2012","journal-title":"Proc Symp VLSI Technol (VLSIT)"},{"key":"ref12","doi-asserted-by":"crossref","first-page":"1725","DOI":"10.1109\/TED.2014.2368191","article-title":"Impacts of random telegraph noise (RTN) on digital circuits","volume":"62","author":"luo","year":"2015","journal-title":"IEEE Trans Electron Devices"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2006.1696222"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2018.8510671"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2019.2924094"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.200901335"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201600166"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.7b08272"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.8b03831"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/16.658674"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1063\/1.1570933"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.100.195302"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1063\/1.2128056"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1063\/1.3697644"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.89.285505"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1063\/1.2719022"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2214441"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1063\/1.3560463"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2714(02)00025-2"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2262453"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.52.228"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1002\/admt.201800720"},{"key":"ref22","first-page":"15.5.1","article-title":"Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI","author":"grasser","year":"2013","journal-title":"IEDM Tech Dig"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2011.09.002"},{"key":"ref24","first-page":"4a.3.1","article-title":"PBTI under dynamic stress: From a single defect point of view","author":"zhao","year":"2011","journal-title":"Proc Int Rel Phys Symp"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2011.5784501"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1063\/1.373600"},{"key":"ref25","first-page":"21.1.1","article-title":"On the microscopic structure of hole traps in pMOSFETs","author":"grasser","year":"2014","journal-title":"IEDM Tech Dig"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/8948470\/08959157.pdf?arnumber=8959157","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T15:57:09Z","timestamp":1642003029000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8959157\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020]]},"references-count":35,"URL":"https:\/\/doi.org\/10.1109\/access.2020.2966577","relation":{},"ISSN":["2169-3536"],"issn-type":[{"value":"2169-3536","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020]]}}}