{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,14]],"date-time":"2025-10-14T20:13:00Z","timestamp":1760472780820,"version":"3.37.3"},"reference-count":51,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2020,1,1]],"date-time":"2020-01-01T00:00:00Z","timestamp":1577836800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/legalcode"}],"funder":[{"DOI":"10.13039\/501100012166","name":"National Basic Research Program of China","doi-asserted-by":"publisher","award":["2018YFB0406504"],"award-info":[{"award-number":["2018YFB0406504"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61874080"],"award-info":[{"award-number":["61874080"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012152","name":"National Postdoctoral Program for Innovative Talents","doi-asserted-by":"publisher","award":["BX20190263"],"award-info":[{"award-number":["BX20190263"]}],"id":[{"id":"10.13039\/501100012152","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2020]]},"DOI":"10.1109\/access.2020.2968742","type":"journal-article","created":{"date-parts":[[2020,1,22]],"date-time":"2020-01-22T21:40:41Z","timestamp":1579729241000},"page":"20043-20050","source":"Crossref","is-referenced-by-count":13,"title":["Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrO<sub>x<\/sub>\/Al<sub>2<\/sub>O<sub>3<\/sub>Gate Dielectrics"],"prefix":"10.1109","volume":"8","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-1276-5409","authenticated-orcid":false,"given":"Kai","family":"Su","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5503-7228","authenticated-orcid":false,"given":"Zeyang","family":"Ren","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5941-5276","authenticated-orcid":false,"given":"Yue","family":"Peng","sequence":"additional","affiliation":[]},{"given":"Jinfeng","family":"Zhang","sequence":"additional","affiliation":[]},{"given":"Jincheng","family":"Zhang","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1864-6953","authenticated-orcid":false,"given":"Yachao","family":"Zhang","sequence":"additional","affiliation":[]},{"given":"Qi","family":"He","sequence":"additional","affiliation":[]},{"given":"Chunfu","family":"Zhang","sequence":"additional","affiliation":[]},{"given":"Yue","family":"Hao","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2019.2896231"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2791420"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1063\/1.3195623"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1149\/1.2737629"},{"key":"ref31","first-page":"1504","article-title":"Integration and electrical properties of ferroelectric Hf0.5Zr0.5O2 thin film on bulk beta-Ga2O3(-201) substrate for memory applications","volume":"39","author":"xiao","year":"2018","journal-title":"IEEE Electron Device Lett"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.3390\/s18061813"},{"key":"ref37","doi-asserted-by":"crossref","first-page":"243","DOI":"10.1038\/s41578-019-0089-0","article-title":"Ferroelectric negative capacitance","volume":"4","author":"\u00ed\u00f1iguez","year":"2019","journal-title":"Nature Materials Rev"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1186\/s11671-019-2943-9"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.201800231"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2018.2871119"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1016\/j.ceramint.2016.01.050"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1063\/1.1925309"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1063\/1.4772985"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.201600501"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1126\/science.1074374"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1063\/1.3636417"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.5b02078"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2017.2732166"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1063\/1.3608145"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2593627"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1063\/1.4953777"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1021\/nl302049k"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2614436"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2810071"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1063\/1.4930294"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1016\/j.diamond.2017.11.016"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1063\/1.4967999"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1063\/1.4983091"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1063\/1.4894291"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1063\/1.4985066"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2880005"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1063\/1.2336999"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2810203"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2886426"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2829122"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2695495"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1088\/0953-8984\/21\/36\/364221"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1063\/1.4897315"},{"key":"ref5","doi-asserted-by":"crossref","first-page":"4","DOI":"10.1063\/1.4958889","article-title":"Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate","volume":"109","author":"inaba","year":"2016","journal-title":"Appl Phys Lett"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2661340"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2702744"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2817238"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1063\/1.4820143"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2685081"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2727879"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2746088"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2717929"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1063\/1.5037925"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2870668"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2006.876325"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2886596"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/8948470\/08966304.pdf?arnumber=8966304","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,9,25]],"date-time":"2023-09-25T14:07:07Z","timestamp":1695650827000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8966304\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020]]},"references-count":51,"URL":"https:\/\/doi.org\/10.1109\/access.2020.2968742","relation":{},"ISSN":["2169-3536"],"issn-type":[{"type":"electronic","value":"2169-3536"}],"subject":[],"published":{"date-parts":[[2020]]}}}