{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,3]],"date-time":"2026-03-03T16:41:27Z","timestamp":1772556087509,"version":"3.50.1"},"reference-count":43,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2020,1,1]],"date-time":"2020-01-01T00:00:00Z","timestamp":1577836800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/legalcode"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61774005"],"award-info":[{"award-number":["61774005"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2020]]},"DOI":"10.1109\/access.2020.2972042","type":"journal-article","created":{"date-parts":[[2020,2,7]],"date-time":"2020-02-07T21:01:22Z","timestamp":1581109282000},"page":"64730-64738","source":"Crossref","is-referenced-by-count":11,"title":["A New Behavioral Model of Gate-Grounded NMOS for Simulating Snapback Characteristics"],"prefix":"10.1109","volume":"8","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-8176-3055","authenticated-orcid":false,"given":"Yize","family":"Wang","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1978-4485","authenticated-orcid":false,"given":"Guangyi","family":"Lu","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4951-4286","authenticated-orcid":false,"given":"Yuan","family":"Wang","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2009.5424336"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/RFIC.2003.1213959"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.23919\/EOS\/ESD.2018.8509756"},{"key":"ref32","first-page":"1","article-title":"Statically triggered active ESD clamps for high-voltage applications","author":"cao","year":"2004","journal-title":"Proc EOS\/ESD Symp"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/ASICON.2011.6157175"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2019.2926103"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2730203"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2618344"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/4.913746"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.23919\/EMCTokyo.2019.8893661"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/ISEMC.2012.6351824"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1109\/EOSESD.2004.5272600"},{"key":"ref11","first-page":"1","article-title":"A physically-based behavioral snapback model","author":"ida","year":"2012","journal-title":"Proc EOS\/ESD Symp"},{"key":"ref12","doi-asserted-by":"crossref","first-page":"1047","DOI":"10.1109\/TCAD.2005.855948","article-title":"Compact modeling of on-chip ESD protection devices using Verilog—A","volume":"25","author":"li","year":"2006","journal-title":"IEEE Trans Comput -Aided Des Integr Circuits Syst"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2013.6531947"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.1996.492137"},{"key":"ref15","first-page":"476","article-title":"Modeling MOS snapback for circuit-level ESD simulation using BSIM3 and VBIC model","author":"zhou","year":"2005","journal-title":"Proc ISQED"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/EOSESD.2007.4401749"},{"key":"ref17","first-page":"1","article-title":"CDM event simulation in SPICE: A holistic approach","author":"hajjar","year":"2011","journal-title":"Proc EOS\/ESD Symp"},{"key":"ref18","first-page":"319","article-title":"A novel SCR macromodel for ESD circuit simulation","author":"juliano","year":"2002","journal-title":"Int Electron Devices Meeting Tech Dig"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/ICSICT.2006.306185"},{"key":"ref28","year":"0","journal-title":"Celestron TLP\/VF-TLP Test System Product Specifications"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2002.804734"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/APEMC.2010.5475621"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2817636"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2004.833372"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2015.2496364"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2019.2916399"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2005.850652"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2630079"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2866683"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-319-03221-4"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2736511"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/TEMC.2009.2029092"},{"key":"ref22","first-page":"1","article-title":"A scalable verilog-a modeling method for ESD protection devices","author":"li","year":"2010","journal-title":"Proc EOS\/ESD Symp"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2017.7993681"},{"key":"ref42","first-page":"1","article-title":"EOS\/ESD symposium proceedings technology scaling effects on the ESD performance of silicide-blocked PMOSFET devices in nanometer bulk CMOS technologies","author":"li","year":"2011","journal-title":"Proc EOS\/ESD Symp"},{"key":"ref24","first-page":"1","article-title":"Study of system ESD co-design of a realistic mobile board","author":"johnsson","year":"2011","journal-title":"Proc EOS\/ESD Symp"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2686638"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2015.2466436"},{"key":"ref26","first-page":"1","article-title":"Accurate transient behavior measurement of high-voltage ESD protections based on a very fast transmission-line pulse system","author":"delmas","year":"2009","journal-title":"Proc EOS\/ESD Symp"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1109\/ICASI.2017.7988171"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/EOSESD.2007.4401767"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/8948470\/08986604.pdf?arnumber=8986604","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T15:56:19Z","timestamp":1642002979000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8986604\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020]]},"references-count":43,"URL":"https:\/\/doi.org\/10.1109\/access.2020.2972042","relation":{},"ISSN":["2169-3536"],"issn-type":[{"value":"2169-3536","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020]]}}}