{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,11]],"date-time":"2026-03-11T03:44:32Z","timestamp":1773200672490,"version":"3.50.1"},"reference-count":83,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2020,1,1]],"date-time":"2020-01-01T00:00:00Z","timestamp":1577836800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/legalcode"},{"start":{"date-parts":[[2020,1,1]],"date-time":"2020-01-01T00:00:00Z","timestamp":1577836800000},"content-version":"am","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/legalcode"}],"funder":[{"DOI":"10.13039\/100000028","name":"Semiconductor Research Corporation (SRC) and the National Science Foundation (NSF) through the grant","doi-asserted-by":"publisher","award":["ECCS 1740136"],"award-info":[{"award-number":["ECCS 1740136"]}],"id":[{"id":"10.13039\/100000028","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Global Ph.D. Fellowship at NYU\/NYU AD"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2020]]},"DOI":"10.1109\/access.2020.2988889","type":"journal-article","created":{"date-parts":[[2020,4,20]],"date-time":"2020-04-20T19:46:51Z","timestamp":1587412011000},"page":"76130-76142","source":"Crossref","is-referenced-by-count":13,"title":["SMART: A Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory"],"prefix":"10.1109","volume":"8","author":[{"given":"Nikhil","family":"Rangarajan","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8975-2414","authenticated-orcid":false,"given":"Satwik","family":"Patnaik","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5093-2939","authenticated-orcid":false,"given":"Johann","family":"Knechtel","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ozgur","family":"Sinanoglu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7501-275X","authenticated-orcid":false,"given":"Shaloo","family":"Rakheja","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref73","doi-asserted-by":"publisher","DOI":"10.23919\/DATE.2018.8341986"},{"key":"ref72","doi-asserted-by":"publisher","DOI":"10.1109\/JXCDC.2018.2809640"},{"key":"ref71","doi-asserted-by":"publisher","DOI":"10.1063\/1.4880938"},{"key":"ref70","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.79.104404"},{"key":"ref76","doi-asserted-by":"publisher","DOI":"10.1109\/JETCAS.2016.2547779"},{"key":"ref77","doi-asserted-by":"publisher","DOI":"10.1109\/MDAT.2017.2682252"},{"key":"ref74","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2019.2917856"},{"key":"ref39","article-title":"Stanford memory trends","author":"wong","year":"2016"},{"key":"ref75","doi-asserted-by":"publisher","DOI":"10.1109\/ISQED.2015.7085496"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/4.210039"},{"key":"ref78","doi-asserted-by":"publisher","DOI":"10.1145\/2155620.2155658"},{"key":"ref79","doi-asserted-by":"publisher","DOI":"10.1145\/2485922.2485961"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2008.2005695"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1063\/1.4916342"},{"key":"ref31","article-title":"Anomalous Hall effect measurements of bilayer magnetic structures","author":"griffiths","year":"2017"},{"key":"ref30","article-title":"Dynamics of magnetoelectric reversal of an antiferromagnetic domain","volume":"11","author":"parthasarathy","year":"2019","journal-title":"Phys Rev A Gen Phys"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.1700307"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1039\/C8NR02083C"},{"key":"ref35","article-title":"Anomalous Hall effect derived from multiple Weyl nodes in high-mobility EuTiO3 films","volume":"4","author":"takahashi","year":"2018","journal-title":"J Adv Sci"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1063\/1.4865791"},{"key":"ref60","year":"2019","journal-title":"Comparing Technologies MRAM vs FRAM"},{"key":"ref62","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2015.24"},{"key":"ref61","doi-asserted-by":"publisher","DOI":"10.1016\/j.mattod.2015.11.009"},{"key":"ref63","doi-asserted-by":"publisher","DOI":"10.2320\/matertrans.ME201507"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1063\/1.4918940"},{"key":"ref64","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2019.2944580"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.115.097201"},{"key":"ref65","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2017.2762630"},{"key":"ref66","first-page":"388","article-title":"Differential power analysis","author":"kocher","year":"1999","journal-title":"Proc Annu Int Cryptol Conf"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1063\/1.4944996"},{"key":"ref67","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-540-28632-5_2"},{"key":"ref68","article-title":"Solving the stochastic Landau-Lifshitz-Gilbert-Slonczewski equation for monodomain nanomagnets: A survey and analysis of numerical techniques","author":"ament","year":"2016","journal-title":"arXiv 1607 04596"},{"key":"ref69","doi-asserted-by":"publisher","DOI":"10.1002\/pssr.201770322"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TC.2016.2621758"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IMW.2015.7150307"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.111.187204"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1038\/nmat2785"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.106.087202"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/TMAG.1969.1066657"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.91.054414"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms13985"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1016\/0031-9163(65)90242-8"},{"key":"ref50","first-page":"203","article-title":"High performance PRAM cell scalable to sub-20 nm technology with below 4F2 cell size, extendable to DRAM applications","author":"kim","year":"2010","journal-title":"Proc Symp VLSI Technol"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1021\/nl3038097"},{"key":"ref59","year":"2019","journal-title":"Nand Flash 101 An Introduction to Nand Flash and How to Design It in to Your Next Product"},{"key":"ref58","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2012.240"},{"key":"ref57","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2012.2185930"},{"key":"ref56","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRev.130.183"},{"key":"ref55","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevA.77.022106"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRev.138.A912"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevMaterials.3.034405"},{"key":"ref52","doi-asserted-by":"publisher","DOI":"10.1002\/admi.201700172"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1145\/2694344.2694387"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1145\/2744769.2744909"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1143\/APEX.5.093008"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1145\/2000064.2000086"},{"key":"ref13","first-page":"1","article-title":"Secure memristor-based main memory","author":"kannan","year":"2014","journal-title":"Proc 51st ACM\/EDAC\/IEEE Design Autom Conf (DAC)"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/SCEECS.2012.6184991"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1145\/2897937.2898087"},{"key":"ref82","doi-asserted-by":"publisher","DOI":"10.1049\/iet-ifs:20080038"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1145\/3195970.3195983"},{"key":"ref81","doi-asserted-by":"publisher","DOI":"10.1109\/ICCD.2017.14"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.7.310"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1038\/srep43705"},{"key":"ref83","doi-asserted-by":"publisher","DOI":"10.1007\/s13389-013-0053-7"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1088\/0953-8984\/2\/13\/010"},{"key":"ref80","doi-asserted-by":"publisher","DOI":"10.1145\/1498690.1498691"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4939-2163-8_6"},{"key":"ref3","article-title":"Architectural techniques to enhance DRAM scaling","author":"kim","year":"2015"},{"key":"ref6","year":"2018","journal-title":"16 Mb 256 K $\\times16$ MRAM Memory—Everspin"},{"key":"ref5","article-title":"Proton irradiation of the 16 GB Intel Optane SSD","author":"wyrwas","year":"2017"},{"key":"ref8","first-page":"973","article-title":"Meltdown: Reading kernel memory from user space","author":"lipp","year":"2018","journal-title":"Proc 7th USENIX Secur Symp (USENIX Secur )"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/SP.2019.00002"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2006.346908"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1145\/1506409.1506429"},{"key":"ref46","first-page":"6","article-title":"Ultrathin (~2 nm) HfOx as the fundamental resistive switching element: Thickness scaling limit, stack engineering and 3D integration","author":"zhao","year":"2014","journal-title":"IEDM Tech Dig"},{"key":"ref45","first-page":"5","article-title":"Sb-doped GeS2 as performance and reliability booster in conductive bridge RAM","author":"vianello","year":"2012","journal-title":"IEDM Tech Dig"},{"key":"ref48","first-page":"1","article-title":"Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiN Ta2O5 Ta RRAM device","author":"goux","year":"2014","journal-title":"Symp VLSI Technol (VLSI-Technology) Dig Tech Papers"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2014.7047125"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1063\/1.3527962"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1063\/1.3694270"},{"key":"ref44","first-page":"91","article-title":"A novel Tite buffered cu-GeSbTe\/SiO2 electrochemical resistive memory (ReRAM)","author":"lin","year":"2010","journal-title":"Proc Symp VLSI Technol"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2007.4419064"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"https:\/\/ieeexplore.ieee.org\/ielam\/6287639\/8948470\/9072373-aam.pdf","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/8948470\/09072373.pdf?arnumber=9072373","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,4,8]],"date-time":"2022-04-08T18:53:33Z","timestamp":1649444013000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9072373\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020]]},"references-count":83,"URL":"https:\/\/doi.org\/10.1109\/access.2020.2988889","relation":{},"ISSN":["2169-3536"],"issn-type":[{"value":"2169-3536","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020]]}}}