{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T20:20:01Z","timestamp":1740169201363,"version":"3.37.3"},"reference-count":56,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2021,1,1]],"date-time":"2021-01-01T00:00:00Z","timestamp":1609459200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/legalcode"}],"funder":[{"DOI":"10.13039\/501100010570","name":"Institut Teknologi Bandung (ITB) through the Riset Luar Negeri ITB 2018 Research Grant","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100010570","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Lower Saxony Ministry for Science and Culture [Nieders\u00e4chsischen Ministerium f\u00fcr Wissenschaft und Kultur (N-MWK)] within the group of Laboratory for Emerging Nanometrology (LENA)-OptoSense"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2021]]},"DOI":"10.1109\/access.2020.3047498","type":"journal-article","created":{"date-parts":[[2020,12,25]],"date-time":"2020-12-25T21:10:23Z","timestamp":1608930623000},"page":"2913-2923","source":"Crossref","is-referenced-by-count":1,"title":["Investigation of Electrical Behaviors Observed in Vertical GaN Nanowire Transistors Using Extended Landauer-B\u00fcttiker Formula"],"prefix":"10.1109","volume":"9","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-8382-3760","authenticated-orcid":false,"given":"Fatimah Arofiati","family":"Noor","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ibnu","family":"Syuhada","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Toto","family":"Winata","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6583-643X","authenticated-orcid":false,"given":"Feng","family":"Yu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Muhammad Fahlesa","family":"Fatahilah","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4522-3625","authenticated-orcid":false,"given":"Hutomo Suryo","family":"Wasisto","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Khairurrijal","family":"Khairurrijal","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1063\/1.1449527"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2179971"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1137\/0111030"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1090\/qam\/10666"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-319-24088-6"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.40.1456"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1063\/1.357263"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2003.815366"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1186\/s40580-019-0189-y"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2457781"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1002\/adem.201800353"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1021\/acsanm.9b00587"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1063\/1.3694674"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2014.2364799"},{"key":"ref1","first-page":"6","article-title":"GaN-based power transistors for future power electronic converters","author":"everts","year":"2010","journal-title":"Proc Young Res Symp Smart Sustain Power Del"},{"journal-title":"Elementary Solid State Physics Principles and Applications","year":"1975","author":"omar","key":"ref20"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1063\/1.3503457"},{"journal-title":"The PN Junction Diode","year":"1989","author":"neudeck","key":"ref21"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1088\/0268-1242\/23\/12\/125024"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1088\/1674-4926\/31\/12\/124002"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.31.6207"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2008.924443"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.62.15754"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2963427"},{"key":"ref56","doi-asserted-by":"publisher","DOI":"10.1023\/A:1022949306215"},{"key":"ref55","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2007.09.013"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2005.859593"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2008.2011681"},{"key":"ref52","doi-asserted-by":"publisher","DOI":"10.1063\/1.4977031"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6528\/aa57b6"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1038\/s41598-019-46186-9"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1063\/1.2721382"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1063\/5.0027922"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2018.03.005"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2008.926735"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2018.08.003"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1088\/0268-1242\/31\/12\/125020"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1126\/science.15.379.553-a"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1088\/1361-648X\/aaabad"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1021\/nl803154m"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2824985"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2015.2418572"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/j.spmi.2017.01.043"},{"key":"ref5","first-page":"1","article-title":"Device characteristics of enhancement mode double heterostructure DH-HEMT with boron-doped GaN gate cap layer for full-bridge inverter circuit","volume":"e2276","author":"mohanbabu","year":"2017","journal-title":"Int J Numer Model"},{"key":"ref8","doi-asserted-by":"crossref","first-page":"2609e","DOI":"10.1002\/jnm.2609","article-title":"Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small-signal model of quaternary AlInGaN HEMTs for microwave frequency applications","volume":"32","author":"anbuselvan","year":"2019","journal-title":"Int J Numer Model Electron Netw Devices Fields"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2013.09.009"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2015.2477445"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1063\/1.4952715"},{"key":"ref46","first-page":"928s","article-title":"Characteristics of ballistic tansport in short-channel MOSFETs","volume":"45","author":"kim","year":"2004","journal-title":"J Korean Phys Soc"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1109\/16.974760"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.1063\/1.4913779"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1109\/MP.2002.1166619"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1016\/S0080-8784(08)62630-7"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRev.103.1648"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2011.2177993"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1007\/BF02124750"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/9312710\/09309022.pdf?arnumber=9309022","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,10,16]],"date-time":"2023-10-16T08:29:55Z","timestamp":1697444995000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9309022\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021]]},"references-count":56,"URL":"https:\/\/doi.org\/10.1109\/access.2020.3047498","relation":{},"ISSN":["2169-3536"],"issn-type":[{"type":"electronic","value":"2169-3536"}],"subject":[],"published":{"date-parts":[[2021]]}}}