{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,2]],"date-time":"2026-06-02T08:37:44Z","timestamp":1780389464489,"version":"3.54.1"},"reference-count":23,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2021,1,1]],"date-time":"2021-01-01T00:00:00Z","timestamp":1609459200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/legalcode"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2021]]},"DOI":"10.1109\/access.2021.3074464","type":"journal-article","created":{"date-parts":[[2021,4,21]],"date-time":"2021-04-21T04:39:28Z","timestamp":1618979968000},"page":"63855-63864","source":"Crossref","is-referenced-by-count":10,"title":["Comparative Analysis of Ultra-Low Current Measurement Topologies With Implementation in 130 nm Technology"],"prefix":"10.1109","volume":"9","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-9053-1179","authenticated-orcid":false,"given":"Sarath Kundumattathil","family":"Mohanan","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6243-8401","authenticated-orcid":false,"given":"Hamza","family":"Boukabache","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4340-8551","authenticated-orcid":false,"given":"Daniel","family":"Perrin","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6753-7879","authenticated-orcid":false,"given":"Ullrich R.","family":"Pfeiffer","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1049\/el.2009.2353"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/BioCAS.2015.7348403"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2013.2248771"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1063\/1.1684005"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.1970.4325595"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1016\/S0168-9002(97)01209-6"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1016\/0167-5087(83)90652-X"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TBCAS.2016.2571306"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TBCAS.2017.2733624"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1016\/j.apradiso.2020.109216"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1093\/rpd\/ncw308"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IEMBS.2006.260865"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/MIXDES.2015.7208578"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1063\/1.2062964"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/ICECS.2009.5410819"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2008.4541862"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TBCAS.2012.2203597"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2011.5746331"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1016\/j.electacta.2013.03.093"},{"key":"ref20","first-page":"79","article-title":"Design considerations for an 8-decade current-to-digital converter with fA sensitivity","volume":"6","author":"voulgari","year":"2015","journal-title":"International Journal of Microelectronics and Computer Science"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/NEWCAS.2015.7182071"},{"key":"ref21","article-title":"A nine decade femtoampere current to frequency converter","author":"voulgari","year":"2017"},{"key":"ref23","first-page":"1","article-title":"Femtoampere sensitive current measurement ASIC in 22 nm technology","author":"mohanan","year":"2019","journal-title":"Proc IEEE SOI-3D-Subthreshold Microelectron Technol Unified Conf (S3S)"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/9312710\/09409046.pdf?arnumber=9409046","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,12,17]],"date-time":"2021-12-17T19:55:43Z","timestamp":1639770943000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9409046\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021]]},"references-count":23,"URL":"https:\/\/doi.org\/10.1109\/access.2021.3074464","relation":{},"ISSN":["2169-3536"],"issn-type":[{"value":"2169-3536","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021]]}}}