{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,19]],"date-time":"2026-06-19T16:26:34Z","timestamp":1781886394740,"version":"3.54.5"},"reference-count":26,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2021,1,1]],"date-time":"2021-01-01T00:00:00Z","timestamp":1609459200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/legalcode"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61934008"],"award-info":[{"award-number":["61934008"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012166","name":"National Key Research and Development Program of China","doi-asserted-by":"publisher","award":["2018YFB2202500"],"award-info":[{"award-number":["2018YFB2202500"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2021]]},"DOI":"10.1109\/access.2021.3080710","type":"journal-article","created":{"date-parts":[[2021,5,17]],"date-time":"2021-05-17T21:24:42Z","timestamp":1621286682000},"page":"74752-74762","source":"Crossref","is-referenced-by-count":35,"title":["A 120\u2013150 GHz Power Amplifier in 28-nm CMOS Achieving 21.9-dB Gain and 11.8-dBm P<sub>sat<\/sub> for Sub-THz Imaging System"],"prefix":"10.1109","volume":"9","author":[{"given":"Jincheng","family":"Zhang","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tianxiang","family":"Wu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Lihe","family":"Nie","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2737-9845","authenticated-orcid":false,"given":"Shunli","family":"Ma","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2794-1324","authenticated-orcid":false,"given":"Yong","family":"Chen","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7799-6251","authenticated-orcid":false,"given":"Junyan","family":"Ren","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref10","first-page":"484","article-title":"A 1.1 V 150 GHz amplifier with 8dB gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines","author":"seo","year":"2009","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref11","first-page":"163","article-title":"A 112&#x2013;134 GHz SiGe amplifier with peak output power of 120 mW","author":"lin","year":"2014","journal-title":"Proc IEEE Radio Freq Integr Circuits Symp (RFIC)"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2014.2379277"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2019.2948763"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2007.903348"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.2005515"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2009.2029128"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/RFIC.2011.5946225"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2020.2990681"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2017.2777976"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2010.2057830"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2014.2362133"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2012.2204923"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2019.2936558"},{"key":"ref8","first-page":"69","article-title":"133GHz CMOS power amplifier with 16dB gain and +8dBm saturated output power for multi-gigabit communication","author":"katayama","year":"2013","journal-title":"Proc European Microwave Integr Circ Conf (EuMIC"},{"key":"ref7","first-page":"1257","article-title":"190-GHz G-band GaN amplifier MMICs with 40GHz of bandwidth","author":"?wikli?ski","year":"2019","journal-title":"IEEE MTT-S Int Microw Symp Dig"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TTHZ.2011.2182118"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2020.2974197"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/36.662726"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2013.2297415"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2016.2607231"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2016.2549527"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2180909"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2018.2799983"},{"key":"ref26","first-page":"374","article-title":"A 15 dBm 12.8%-PAE compact D-band power amplifier with two-way power combining in 16 nm FinFET CMOS","author":"philippe","year":"2020","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2015.2466549"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/9312710\/09432813.pdf?arnumber=9432813","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,12,17]],"date-time":"2021-12-17T19:56:09Z","timestamp":1639770969000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9432813\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021]]},"references-count":26,"URL":"https:\/\/doi.org\/10.1109\/access.2021.3080710","relation":{},"ISSN":["2169-3536"],"issn-type":[{"value":"2169-3536","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021]]}}}