{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,12]],"date-time":"2026-06-12T17:07:20Z","timestamp":1781284040770,"version":"3.54.1"},"reference-count":24,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2021,1,1]],"date-time":"2021-01-01T00:00:00Z","timestamp":1609459200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/legalcode"}],"funder":[{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Korean Government [Ministry of Science and ICT (MSIT)]","award":["2018R1A2B600821613"],"award-info":[{"award-number":["2018R1A2B600821613"]}]},{"name":"Brain Korea 21 (BK21) Fostering Outstanding Universities for Research (FOUR) Program funded by the Ministry of Education (MOE), South Korea"},{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","award":["5199991714138"],"award-info":[{"award-number":["5199991714138"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100004358","name":"Samsung Electronics","doi-asserted-by":"publisher","award":["2019-0184"],"award-info":[{"award-number":["2019-0184"]}],"id":[{"id":"10.13039\/100004358","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2021]]},"DOI":"10.1109\/access.2021.3102687","type":"journal-article","created":{"date-parts":[[2021,8,5]],"date-time":"2021-08-05T20:08:52Z","timestamp":1628194132000},"page":"111567-111575","source":"Crossref","is-referenced-by-count":8,"title":["S-TAT Leakage Current in Partial Isolation Type Saddle-FinFET (Pi-FinFET)s"],"prefix":"10.1109","volume":"9","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-2211-3730","authenticated-orcid":false,"given":"Jin Hyo","family":"Park","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Geon","family":"Kim","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5942-329X","authenticated-orcid":false,"given":"Dong Yeong","family":"Kim","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Su Yeon","family":"Kim","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sunyong","family":"Yoo","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9489-3801","authenticated-orcid":false,"given":"Myoung Jin","family":"Lee","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2224089"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/.2005.1469201"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.908882"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268437"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.3390\/electronics8010008"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.3390\/electronics7100227"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2005.846590"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/16.372079"},{"key":"ref18","year":"2013","journal-title":"TCAD Sentaurus Manual Sysnopsis Version D-2013 03"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/16.121690"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2010.5703348"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1147\/rd.462.0187"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2714(98)00044-4"},{"key":"ref5","doi-asserted-by":"crossref","first-page":"718","DOI":"10.1109\/IEDM.1987.191531","article-title":"the impact of gate-induced drain leakage current on mosfet scaling","author":"chan","year":"1987","journal-title":"1987 International Electron Devices Meeting"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2012.10.015"},{"key":"ref7","first-page":"147","article-title":"Highly scalable saddle-Fin (S-Fin) transistor for sub-50 nm DRAM technology","author":"chung","year":"2006","journal-title":"Proc Symp VLSI Technol"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2010.2102570"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2009.2038243"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2009.01.066"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2006.880821"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2019.2891260"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2009.04.011"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/EDTM50988.2021.9421060"},{"key":"ref23","doi-asserted-by":"crossref","DOI":"10.7567\/JJAP.54.06FG10","article-title":"Gate induced drain leakage reduction with analysis of gate fringing field effect on high-$\\kappa$\n\/metal gate CMOS technology","volume":"54","author":"jang","year":"2015","journal-title":"Jpn J Appl Phys"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/9312710\/09507492.pdf?arnumber=9507492","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,12,23]],"date-time":"2021-12-23T05:29:56Z","timestamp":1640237396000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9507492\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021]]},"references-count":24,"URL":"https:\/\/doi.org\/10.1109\/access.2021.3102687","relation":{},"ISSN":["2169-3536"],"issn-type":[{"value":"2169-3536","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021]]}}}