{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T20:21:15Z","timestamp":1740169275549,"version":"3.37.3"},"reference-count":38,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2021,1,1]],"date-time":"2021-01-01T00:00:00Z","timestamp":1609459200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/legalcode"}],"funder":[{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea (NRF) Grant","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Korean Government through the Ministry of Science and ICT","award":["2019R1A2C3011079"],"award-info":[{"award-number":["2019R1A2C3011079"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2021]]},"DOI":"10.1109\/access.2021.3115496","type":"journal-article","created":{"date-parts":[[2021,9,24]],"date-time":"2021-09-24T20:50:05Z","timestamp":1632516605000},"page":"133274-133288","source":"Crossref","is-referenced-by-count":0,"title":["ECC-Aware Fast and Reliable Pattern Matching Redundancy Analysis for Highly Reliable Memory"],"prefix":"10.1109","volume":"9","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-2385-2375","authenticated-orcid":false,"given":"Donghyun","family":"Han","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6868-0829","authenticated-orcid":false,"given":"Hayoung","family":"Lee","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Seungtaek","family":"Lee","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7093-2095","authenticated-orcid":false,"given":"Sungho","family":"Kang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2017.2671790"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1975.1050655"},{"key":"ref32","first-page":"81","article-title":"An integrated ECC and redundancy repair scheme for memory reliability enhancement","author":"su","year":"2005","journal-title":"Proc IEEE Int Symp Defect Fault Tolerance VLSI Syst"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/TEST.2012.6401576"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/DFT.2007.28"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/TBCAS.2020.2995784"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2020.3010743"},{"key":"ref35","first-page":"68","article-title":"A simulator for evaluating redundancy analysis algorithms of repairable embedded memories","author":"huang","year":"2002","journal-title":"Proc IEEE Int Workshop Memory Technol Design Testing"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1147\/rd.243.0398"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4419-7958-2_2"},{"key":"ref11","first-page":"695","article-title":"Self healing memory using 2D spares","author":"rao","year":"2021","journal-title":"Proc 5th Int Conf Comput Methodol Commun (ICCMC)"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2017.2752298"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TC.2020.2996747"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/HPCA.2015.7056058"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2021.3059843"},{"key":"ref16","first-page":"1","article-title":"Co-architecting controllers and DRAM to enhance DRAM process scaling","volume":"14","author":"kang","year":"2014","journal-title":"Memory Forum"},{"key":"ref17","first-page":"276","article-title":"Understanding DDR4 in pursuit of in-DRAM ECC","author":"kwon","year":"2014","journal-title":"Proc Int SoC Design Conf (ISOCC)"},{"year":"2014","key":"ref18"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2014.2353799"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/MDT.2004.19"},{"key":"ref4","first-page":"175","article-title":"Defect analysis system speeds test and repair of redundant memories","volume":"57","author":"tarr","year":"1984","journal-title":"Electronics"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2010.2062830"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/55.46938"},{"key":"ref6","first-page":"478","article-title":"A fast redundancy analysis algorithm in ATE for repairing faulty memories","volume":"34","author":"cho","year":"2012","journal-title":"ETRI J"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/VTEST.2004.1299251"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1145\/318013.318075"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2017.2760505"},{"key":"ref7","first-page":"478","article-title":"A very efficient redundancy analysis method using fault grouping","volume":"34","author":"cho","year":"2012","journal-title":"ETRI J"},{"key":"ref2","first-page":"111","article-title":"Cosmic rays don’t strike twice: Understanding the nature of DRAM errors and the implications for system design","author":"hwang","year":"2012","journal-title":"Proc Int Conf Archit Support Program Lang Oper Syst"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/66.388016"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2008.2005988"},{"key":"ref20","first-page":"206","article-title":"A 16 Gb LPDDR4X SDRAM with an NBTI-tolerant circuit solution, an SWD PMOS GIDL reduction technique, an adaptive gear-down scheme and a metastable-free DQS aligner in a 10 nm class DRAM process","author":"chun","year":"2018","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/4.62132"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2020.3027360"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/ISAS.2011.5960927"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/HPCA.2017.30"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.5573\/JSTS.2012.12.3.266"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/TR.2003.821925"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/9312710\/09548033.pdf?arnumber=9548033","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,12,17]],"date-time":"2021-12-17T19:55:44Z","timestamp":1639770944000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9548033\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021]]},"references-count":38,"URL":"https:\/\/doi.org\/10.1109\/access.2021.3115496","relation":{},"ISSN":["2169-3536"],"issn-type":[{"type":"electronic","value":"2169-3536"}],"subject":[],"published":{"date-parts":[[2021]]}}}