{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,26]],"date-time":"2026-02-26T20:47:09Z","timestamp":1772138829749,"version":"3.50.1"},"reference-count":102,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2021,1,1]],"date-time":"2021-01-01T00:00:00Z","timestamp":1609459200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/legalcode"}],"funder":[{"DOI":"10.13039\/501100000780","name":"European Commission (H2020 Program) within the Project \u201cGaNonCMOS\u201d","doi-asserted-by":"publisher","award":["721107"],"award-info":[{"award-number":["721107"]}],"id":[{"id":"10.13039\/501100000780","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2021]]},"DOI":"10.1109\/access.2021.3132667","type":"journal-article","created":{"date-parts":[[2021,12,3]],"date-time":"2021-12-03T20:27:37Z","timestamp":1638563257000},"page":"163122-163137","source":"Crossref","is-referenced-by-count":39,"title":["Building Blocks for GaN Power Integration"],"prefix":"10.1109","volume":"9","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-4313-3490","authenticated-orcid":false,"given":"Michael","family":"Basler","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9529-5109","authenticated-orcid":false,"given":"Richard","family":"Reiner","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5095-8781","authenticated-orcid":false,"given":"Stefan","family":"Moench","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6255-117X","authenticated-orcid":false,"given":"Fouad","family":"Benkhelifa","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5303-2204","authenticated-orcid":false,"given":"Philipp","family":"Doring","sequence":"additional","affiliation":[]},{"given":"Patrick","family":"Waltereit","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3003-0134","authenticated-orcid":false,"given":"Rudiger","family":"Quay","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5193-9016","authenticated-orcid":false,"given":"Oliver","family":"Ambacher","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2015.7123385"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2020.2994656"},{"key":"ref33","first-page":"1","article-title":"A GaN-on-Si-based logic, driver and DC–DC converter circuit with closed-loop peak current-mode control","author":"basler","year":"2019","journal-title":"Proc Int Exhib Conf Power Electron Intell Motion Renew Energy Energy Manage (PCIM Europe)"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2019.2948280"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2019.8757685"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA.2018.8569057"},{"key":"ref37","article-title":"Design and characterization of highly-effcient GaN-HEMTs for power applications","author":"reiner","year":"2017"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1002\/pssc.201200563"},{"key":"ref35","year":"2019","journal-title":"Power GaN 2019 Epitaxy Devices Applications & Technology Trends Market and Technology Report 2019"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2020.3018404"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2018.8393606"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.7567\/1347-4065\/ab1313"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIC.2016.7573496"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2396649"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/CSICS.2010.5619644"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.50.04DF02"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC19947.2020.9062940"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD46842.2020.9170047"},{"key":"ref101","doi-asserted-by":"publisher","DOI":"10.1049\/ell2.12068"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/CICC48029.2020.9075937"},{"key":"ref100","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.202000379"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC42613.2021.9365828"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1109\/4.508213"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA46397.2019.8998895"},{"key":"ref59","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA.2017.8170580"},{"key":"ref58","doi-asserted-by":"publisher","DOI":"10.1109\/PESC.2004.1355812"},{"key":"ref57","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.202170014"},{"key":"ref56","first-page":"28","article-title":"Asymmetrical substrate-biasing effects at up to 350 V operation of symmetrical monolithic normally-off GaN-on-Si half-bridges","author":"moench","year":"2019","journal-title":"Proc IEEE 7th Workshop Wide Bandgap Power Devices Appl (WiPDA)"},{"key":"ref55","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA.2016.7799940"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2009.5158000"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1109\/ICICDT.2019.8790928"},{"key":"ref52","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA.2016.7799933"},{"key":"ref40","first-page":"1","article-title":"Investigation of GaN-HEMTs in reverse conduction","author":"reiner","year":"2017","journal-title":"Proc Int Exhib Conf Power Electron Intell Motion Renew Energy Energy Manage (PCIM Europe)"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268488"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM13553.2020.9371918"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2019.8757674"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/EDSSC.2009.5394230"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.23919\/ISPSD.2017.7988981"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1109\/TMAG.2009.2030590"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.7567\/1347-4065\/ab5b63"},{"key":"ref9","author":"lidow","year":"2020","journal-title":"GaN Transistors for Efficient Power Conversion"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2005.850642"},{"key":"ref45","first-page":"27","article-title":"RF MIM capacitors using Si3\/N4 dielectric in standard industrial BiCMOS technology","volume":"1","author":"arnould","year":"2004","journal-title":"Proc IEEE Int Symp Ind Electron"},{"key":"ref48","first-page":"1","article-title":"Monolithic integration of inductive components in a GaN-on-Si technology","author":"basler","year":"2020","journal-title":"Proc 11th Int Conf Integr Power Electron Syst (CIPS)"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1109\/4.792620"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.46.115"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA.2018.8569168"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2854407"},{"key":"ref43","first-page":"1","article-title":"Design of low-resistance and area-efficient GaN-HEMTs for low-voltage power applications","author":"reiner","year":"2021","journal-title":"Proc Int Exhib Conf Power Electron Intell Motion Renew Energy Energy Manage (PCIM Europe)"},{"key":"ref73","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2017.05.009"},{"key":"ref72","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA.2016.7799938"},{"key":"ref71","doi-asserted-by":"publisher","DOI":"10.1109\/IWIPP.2015.7295967"},{"key":"ref70","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA.2015.7369264"},{"key":"ref76","first-page":"254","article-title":"A 600 V p-GaN gate HEMT with intrinsic freewheeling Schottky-diode in a GaN power IC with bootstrapped driver and sensors","author":"moench","year":"2020","journal-title":"Proc IEEE Int Symp Power Semicond Devices ICs (ISPSD)"},{"key":"ref77","first-page":"1","article-title":"Breaking speed limits with GaN power ICs","author":"kinzer","year":"0"},{"key":"ref74","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2019.2958059"},{"key":"ref75","first-page":"1","article-title":"A 600 V GaN-on-Si power IC with integrated gate driver, freewheeling diode, temperature and current sensors and auxiliary devices","author":"moench","year":"2020","journal-title":"Proc 11th Int Conf Integr Power Electron Syst (CIPS)"},{"key":"ref78","doi-asserted-by":"publisher","DOI":"10.1109\/APEC.2016.7468154"},{"key":"ref79","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2019.8757678"},{"key":"ref60","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2009.5424397"},{"key":"ref62","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2015.2513058"},{"key":"ref61","first-page":"1","article-title":"A three-phase GaN-on-Si inverter IC for low-voltage motor drives","author":"moench","year":"2021","journal-title":"Proc Int Exhib Conf Power Electron Intell Motion Renew Energy Energy Manage (PCIM Europe)"},{"key":"ref63","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2009.2015897"},{"key":"ref64","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2020.3008226"},{"key":"ref65","first-page":"1","article-title":"Monolithic integration of GaN transistors for higher efficiency and power density in DC–DC converters","author":"reusch","year":"2015","journal-title":"Proc Int Exhib Conf Power Electron Intell Motion Renew Energy Energy Manage (PCIM Europe)"},{"key":"ref66","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDAAsia49671.2020.9360274"},{"key":"ref67","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA.2017.8170558"},{"key":"ref68","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2014.6855973"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1049\/iet-pel.2017.0397"},{"key":"ref69","doi-asserted-by":"publisher","DOI":"10.1109\/WAMICON.2014.6857740"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2657579"},{"key":"ref95","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2020.3039264"},{"key":"ref94","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD46842.2020.9170081"},{"key":"ref93","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD46842.2020.9170078"},{"key":"ref92","doi-asserted-by":"publisher","DOI":"10.1109\/TSM.2020.3017703"},{"key":"ref91","year":"2021","journal-title":"Pricelist for General Europractice MPW Runs"},{"key":"ref90","year":"2020","journal-title":"Datasheet XU035 0 35 Micron Modular Analog Mixed Signal Ultra High-Voltage Technology"},{"key":"ref102","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2557811"},{"key":"ref98","doi-asserted-by":"publisher","DOI":"10.1109\/DRC.2002.1029492"},{"key":"ref99","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.922982"},{"key":"ref96","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6463\/aac8aa"},{"key":"ref97","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2021.3109840"},{"key":"ref10","first-page":"288","article-title":"A monolithic E-mode GaN 15 W 400 V offline self-supplied hysteretic buck converter with 95.6% efficiency","author":"kaufmann","year":"2020","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1002\/pssb.200983453"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/VLSITechnology18217.2020.9265112"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM13553.2020.9372069"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19573.2019.8993572"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2725908"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.23919\/ICPE2019-ECCEAsia42246.2019.8796971"},{"key":"ref82","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2017.8096977"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2019.2946418"},{"key":"ref81","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2717934"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2291854"},{"key":"ref84","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.52.08JN15"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2018.8393646"},{"key":"ref83","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD46842.2020.9170100"},{"key":"ref80","doi-asserted-by":"publisher","DOI":"10.1109\/APEC.2015.7104798"},{"key":"ref89","year":"2020","journal-title":"Tutorial All-GaN GaN-ICs in the IMEC’s GaN-on-SOI Technologie"},{"key":"ref85","doi-asserted-by":"publisher","DOI":"10.1088\/1674-4926\/42\/2\/024103"},{"key":"ref86","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2020.2967027"},{"key":"ref87","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2014.2300897"},{"key":"ref88","doi-asserted-by":"publisher","DOI":"10.1109\/ICPE.2011.5944616"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/9312710\/09635762.pdf?arnumber=9635762","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,3,28]],"date-time":"2022-03-28T21:13:35Z","timestamp":1648502015000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9635762\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021]]},"references-count":102,"URL":"https:\/\/doi.org\/10.1109\/access.2021.3132667","relation":{},"ISSN":["2169-3536"],"issn-type":[{"value":"2169-3536","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021]]}}}