{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,31]],"date-time":"2026-03-31T14:26:07Z","timestamp":1774967167059,"version":"3.50.1"},"reference-count":34,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2021,1,1]],"date-time":"2021-01-01T00:00:00Z","timestamp":1609459200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by-nc-nd\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea (NRF) Grant by the Korean Government through Ministry of Science and ICT","doi-asserted-by":"publisher","award":["NRF-2020R1A2C1005087"],"award-info":[{"award-number":["NRF-2020R1A2C1005087"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]},{"name":"BK21 FOUR Project by the Ministry of Education, South Korea","award":["4199990113966"],"award-info":[{"award-number":["4199990113966"]}]},{"DOI":"10.13039\/501100003052","name":"Ministry of Trade, Industry and Energy","doi-asserted-by":"publisher","award":["10080513"],"award-info":[{"award-number":["10080513"]}],"id":[{"id":"10.13039\/501100003052","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100020088","name":"Korea Semiconductor Research Consortium (KSRC) Program for Developing the Future Semiconductor Devices","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100020088","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003725","name":"Basic Science Research Program through the National Research Foundation of Korea (NRF) by the Ministry of Education","doi-asserted-by":"publisher","award":["NRF-2021R1A6A3A13039927"],"award-info":[{"award-number":["NRF-2021R1A6A3A13039927"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2021]]},"DOI":"10.1109\/access.2021.3133572","type":"journal-article","created":{"date-parts":[[2021,12,7]],"date-time":"2021-12-07T20:36:03Z","timestamp":1638909363000},"page":"163675-163685","source":"Crossref","is-referenced-by-count":17,"title":["Design of Capacitorless DRAM Based on Polycrystalline Silicon Nanotube Structure"],"prefix":"10.1109","volume":"9","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-1742-7572","authenticated-orcid":false,"given":"Jin","family":"Park","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9372-6796","authenticated-orcid":false,"given":"Min Su","family":"Cho","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4954-3861","authenticated-orcid":false,"given":"Sang Ho","family":"Lee","sequence":"additional","affiliation":[]},{"given":"Hee Dae","family":"An","sequence":"additional","affiliation":[]},{"given":"So Ra","family":"Min","sequence":"additional","affiliation":[]},{"given":"Geon Uk","family":"Kim","sequence":"additional","affiliation":[]},{"given":"Young Jun","family":"Yoon","sequence":"additional","affiliation":[]},{"given":"Jae Hwa","family":"Seo","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8723-439X","authenticated-orcid":false,"given":"Sin-Hyung","family":"Lee","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1908-0015","authenticated-orcid":false,"given":"Jaewon","family":"Jang","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3217-1309","authenticated-orcid":false,"given":"Jin-Hyuk","family":"Bae","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7726-9740","authenticated-orcid":false,"given":"In Man","family":"Kang","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1979.1051189"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.57.04FG03"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2019.2925525"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2020.2976638"},{"key":"ref34","year":"2016","journal-title":"Sentaurus User’s Manual Version L-2016 03"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2176944"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.3390\/electronics9122134"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2014.2310175"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1016\/j.mssp.2018.02.014"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2672203"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2021.3068987"},{"key":"ref16","year":"2016","journal-title":"Sentaurus Device User Guide Version L-2016 03"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.7567\/1347-4065\/ab65d2"},{"key":"ref18","author":"tekleab","year":"2012","journal-title":"Silicon nanotube MOSFET"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1021\/nl202563s"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2021.3056952"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2010.2046743"},{"key":"ref27","first-page":"277","article-title":"A capacitor-less DRAM cell on 75 nm gate length, 16 nm thin fully depleted SOI device for high density embedded memories","author":"ranica","year":"2005","journal-title":"IEDM Tech Dig"},{"key":"ref3","first-page":"635","article-title":"A capacitorless DRAM cell on SOI substrate","author":"wann","year":"1993","journal-title":"IEDM Tech Dig"},{"key":"ref6","first-page":"1","article-title":"55 nm capacitor-less 1T DRAM cell transistor with non-overlap structure","author":"song","year":"2008","journal-title":"IEDM Tech Dig"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1007\/s00339-020-04125-w"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2006.870283"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2050104"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2239253"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1147\/rd.462.0187"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.2000601"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/55.981314"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1007\/s10825-016-0819-0"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/SOI.2012.6404391"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2007.01.016"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1063\/1.4935453"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2329551"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2205387"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1166\/jnn.2017.14027"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/9312710\/09641815.pdf?arnumber=9641815","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,3,28]],"date-time":"2022-03-28T21:16:26Z","timestamp":1648502186000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9641815\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021]]},"references-count":34,"URL":"https:\/\/doi.org\/10.1109\/access.2021.3133572","relation":{},"ISSN":["2169-3536"],"issn-type":[{"value":"2169-3536","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021]]}}}