{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T20:21:35Z","timestamp":1740169295418,"version":"3.37.3"},"reference-count":80,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2022,1,1]],"date-time":"2022-01-01T00:00:00Z","timestamp":1640995200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/legalcode"}],"funder":[{"name":"Austrian Federal Ministry for Digital and Economic Affairs;"},{"DOI":"10.13039\/100010132","name":"\u00d6sterreichische Nationalstiftung f\u00fcr Forschung, Technologie und Entwicklung","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100010132","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100006012","name":"Christian Doppler Research Association","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100006012","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2022]]},"DOI":"10.1109\/access.2022.3182695","type":"journal-article","created":{"date-parts":[[2022,6,13]],"date-time":"2022-06-13T20:37:15Z","timestamp":1655152635000},"page":"64388-64407","source":"Crossref","is-referenced-by-count":1,"title":["Performance Analysis of Resonant-Fin Transistors and Their Application in RF-Circuit Design"],"prefix":"10.1109","volume":"10","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-3809-8862","authenticated-orcid":false,"given":"Richard","family":"Hudeczek","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering and Information Technology, Technical University of Munich, Munich, Germany"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9089-7530","authenticated-orcid":false,"given":"Ehrentraud","family":"Hager","sequence":"additional","affiliation":[{"name":"Christian Doppler Laboratory for Digitally Assisted RF Transceivers for Future Mobile Communications, Johannes Kepler University (JKU) Linz, Linz, Austria"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3111-1494","authenticated-orcid":false,"given":"Peter","family":"Baumgartner","sequence":"additional","affiliation":[{"name":"Intel, Neubiberg, Germany"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1519-076X","authenticated-orcid":false,"given":"Harald","family":"Pretl","sequence":"additional","affiliation":[{"name":"Institute for Integrated Circuits, Johannes Kepler University (JKU) Linz, 4040 Linz, Austria"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/6GSUMMIT49458.2020.9083880"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/EuCAP.2012.6206084"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1017\/CBO9780511541131"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/Austrochip53290.2021.9576873"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2007.09.037"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.31438\/trf.hh2018.22"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.3390\/nano11102547"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1103\/physrevapplied.12.014022"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/JMEMS.2014.2308259"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/ULTSYM.2010.5935682"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1038\/micronano.2015.5"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2018.8310327"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2020.3030074"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2021.3097302"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC53440.2021.9631769"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2017.2655459"},{"volume-title":"Phononic Crystals: Fundamentals and Applications","year":"2015","author":"Khelif","key":"ref17"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1063\/1.1713863"},{"volume-title":"Mechanical Behaviour of Engineering Materials","year":"2007","author":"Roesler","key":"ref19"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-642-59497-7_157"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.3390\/mi10020126"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1021\/j100792a049"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1063\/1.4945672"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1088\/0022-3727\/36\/15\/304"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1088\/0034-4885\/69\/2\/r02"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1103\/physrev.130.1324"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/ICSICT.2006.306094"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1007\/s11432-011-4224-9"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2006.888533"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2008.4588547"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2004.836648"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1209\/0295-5075\/110\/54003"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1201\/b14970"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1016\/j.jmat.2015.12.002"},{"volume-title":"Monolithically integrated MEMS resonators and oscillators in standard IC technology","year":"2016","author":"Bahr","key":"ref35"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2020.3025521"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1063\/1.354790"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1103\/physrev.94.42"},{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1982.20659"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1016\/b978-0-444-51616-9.x5000-0"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1016\/0924-4247(91)85017-i"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4614-8517-9_2"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.4236\/jst.2014.42007"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.892353"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1983.21207"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1109\/16.987121"},{"volume-title":"Advanced modeling of strained CMOS technology","year":"2007","author":"Ungersb\u00f6ck","key":"ref47"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.1007\/s12633-013-9144-4"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.18494\/sam.2018.1959"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1088\/0022-3727\/4\/11\/317"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2009.01.017"},{"key":"ref52","doi-asserted-by":"publisher","DOI":"10.1063\/1.2730561"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1109\/ICCAD.2015.7372646"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1109\/TUFFC.2022.3147973"},{"key":"ref55","doi-asserted-by":"publisher","DOI":"10.1038\/am.2016.31"},{"key":"ref56","doi-asserted-by":"publisher","DOI":"10.1007\/s10825-011-0374-7"},{"key":"ref57","first-page":"225","article-title":"In-plane mobility anisotropy and universality under uni-axial strains in NAND p-MOS inversion layers on (100), [110], and (111) Si","author":"Irie","year":"2004","journal-title":"IEDM Tech. Dig."},{"key":"ref58","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2004.831358"},{"key":"ref59","doi-asserted-by":"publisher","DOI":"10.1017\/9781108626200"},{"key":"ref60","doi-asserted-by":"publisher","DOI":"10.1109\/RFIC51843.2021.9490409"},{"key":"ref61","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC42613.2021.9365768"},{"key":"ref62","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC19947.2020.9062921"},{"volume-title":"Design of Analog CMOS Integrated Circuits","year":"2015","author":"Razavi","key":"ref63"},{"volume-title":"Noise; Sources, Characterization, Measurement","year":"1970","author":"Van der Ziel","key":"ref64"},{"key":"ref65","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2009.2024970"},{"key":"ref66","doi-asserted-by":"publisher","DOI":"10.1109\/4.924852"},{"key":"ref67","doi-asserted-by":"publisher","DOI":"10.1038\/srep03244"},{"key":"ref68","doi-asserted-by":"publisher","DOI":"10.1007\/s00542-011-1332-9"},{"key":"ref69","doi-asserted-by":"publisher","DOI":"10.1038\/s41598-017-14895-8"},{"key":"ref70","doi-asserted-by":"publisher","DOI":"10.3390\/mi11070630"},{"key":"ref71","doi-asserted-by":"publisher","DOI":"10.1002\/SERIES9891"},{"key":"ref72","doi-asserted-by":"publisher","DOI":"10.1109\/MEMSYS.2008.4443596"},{"key":"ref73","doi-asserted-by":"publisher","DOI":"10.1109\/JMEMS.2014.2374451"},{"key":"ref74","doi-asserted-by":"publisher","DOI":"10.1109\/SENSOR.2009.5285627"},{"key":"ref75","doi-asserted-by":"publisher","DOI":"10.1103\/physrevb.51.15861"},{"key":"ref76","doi-asserted-by":"publisher","DOI":"10.1109\/FCS.2015.7138799"},{"key":"ref77","doi-asserted-by":"publisher","DOI":"10.1063\/1.3499319"},{"key":"ref78","doi-asserted-by":"publisher","DOI":"10.1063\/1.3475987"},{"key":"ref79","doi-asserted-by":"publisher","DOI":"10.1038\/s41598-019-54278-9"},{"key":"ref80","doi-asserted-by":"publisher","DOI":"10.1515\/msp-2017-0115"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/9668973\/09795011.pdf?arnumber=9795011","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,2,1]],"date-time":"2024-02-01T04:17:27Z","timestamp":1706761047000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9795011\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022]]},"references-count":80,"URL":"https:\/\/doi.org\/10.1109\/access.2022.3182695","relation":{},"ISSN":["2169-3536"],"issn-type":[{"type":"electronic","value":"2169-3536"}],"subject":[],"published":{"date-parts":[[2022]]}}}