{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,1]],"date-time":"2026-04-01T18:52:17Z","timestamp":1775069537601,"version":"3.50.1"},"reference-count":29,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2022,1,1]],"date-time":"2022-01-01T00:00:00Z","timestamp":1640995200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/legalcode"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2022]]},"DOI":"10.1109\/access.2022.3198644","type":"journal-article","created":{"date-parts":[[2022,8,15]],"date-time":"2022-08-15T19:51:16Z","timestamp":1660593076000},"page":"86270-86285","source":"Crossref","is-referenced-by-count":24,"title":["Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge"],"prefix":"10.1109","volume":"10","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-2347-8870","authenticated-orcid":false,"given":"Dayana A.","family":"Pino-Monroy","sequence":"first","affiliation":[{"name":"STMicroelectronics, Crolles, France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Patrick","family":"Scheer","sequence":"additional","affiliation":[{"name":"STMicroelectronics, Crolles, France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6578-1803","authenticated-orcid":false,"given":"Mohamed Khalil","family":"Bouchoucha","sequence":"additional","affiliation":[{"name":"STMicroelectronics, Crolles, France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4623-6425","authenticated-orcid":false,"given":"Carlos","family":"Galup-Montoro","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronics Engineering, Universidade Federal de Santa Catarina, Florianópolis, Brazil"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0187-604X","authenticated-orcid":false,"given":"Manuel J.","family":"Barragan","sequence":"additional","affiliation":[{"name":"TIMA Laboratory, CNRS, Grenoble INP, Université Grenoble Alpes, Grenoble, France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5603-3352","authenticated-orcid":false,"given":"Philippe","family":"Cathelin","sequence":"additional","affiliation":[{"name":"STMicroelectronics, Crolles, France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jean-Michel","family":"Fournier","sequence":"additional","affiliation":[{"name":"TIMA Laboratory, CNRS, Grenoble INP, Université Grenoble Alpes, Grenoble, France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2745-4523","authenticated-orcid":false,"given":"Andreia","family":"Cathelin","sequence":"additional","affiliation":[{"name":"STMicroelectronics, Crolles, France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9930-9945","authenticated-orcid":false,"given":"Sylvain","family":"Bourdel","sequence":"additional","affiliation":[{"name":"TIMA Laboratory, CNRS, Grenoble INP, Université Grenoble Alpes, Grenoble, France"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/MSSC.2017.2745838"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/MSSC.2017.2712318"},{"key":"ref15","first-page":"529","article-title":"Calculation of MOSFET distortion using the transconductance-to-current ratio (gm\/ID)","author":"jespers","year":"2015","journal-title":"Proc IEEE Int Symp Circuits Syst (ISCAS)"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.1998.704165"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1017\/CBO9780511803840"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2007.4405785"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/EDTM47692.2020.9117979"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2016.2557327"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/MSSC.2018.2844607"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/NEWCAS.2008.4606344"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2018.2868387"},{"key":"ref18","first-page":"1","article-title":"28 FDSOI technology for low-voltage, analog and RF applications","author":"planes","year":"2016","journal-title":"Proc 13th IEEE Int Conf Solid-State Integr Circuit Technol (ICSICT)"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/NEWCAS.2018.8585612"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2004.832707"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2019.2914502"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/ICMETE.2018.00073"},{"key":"ref20","first-page":"85","article-title":"Figure-of-merit for optimizing the current-efficiency of low-power RF circuits","author":"mangla","year":"2011","journal-title":"Proc Int Conf Mixed Design Integr Circuits Syst (MIXDES'06)"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2012.01.004"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/LAEDC49063.2020.9073239"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1017\/9781108125840"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2020.3010875"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.3390\/jlpea12020034"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1002\/0470855460"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/22.981286"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1142\/ISASSET"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2458336"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2458339"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/4.720397"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1007\/BF01239381"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/9668973\/09856610.pdf?arnumber=9856610","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,4,27]],"date-time":"2023-04-27T14:34:43Z","timestamp":1682606083000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9856610\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022]]},"references-count":29,"URL":"https:\/\/doi.org\/10.1109\/access.2022.3198644","relation":{},"ISSN":["2169-3536"],"issn-type":[{"value":"2169-3536","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022]]}}}