{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,29]],"date-time":"2026-05-29T11:26:52Z","timestamp":1780054012314,"version":"3.54.0"},"reference-count":77,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2022,1,1]],"date-time":"2022-01-01T00:00:00Z","timestamp":1640995200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/legalcode"}],"funder":[{"name":"Spanish MICINN projects","award":["TIN2017-87237-P"],"award-info":[{"award-number":["TIN2017-87237-P"]}]},{"name":"Spanish MICINN projects","award":["PID2020-112916GB-I00"],"award-info":[{"award-number":["PID2020-112916GB-I00"]}]},{"name":"European Union\u2019s Horizon 2020 Research and Innovation Program","award":["101008126"],"award-info":[{"award-number":["101008126"]}]},{"name":"French government program \"Programme d'Investissements d'Avenir (PIA)\"","award":["ANR-10-AIRT-05"],"award-info":[{"award-number":["ANR-10-AIRT-05"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2022]]},"DOI":"10.1109\/access.2022.3217527","type":"journal-article","created":{"date-parts":[[2022,11,3]],"date-time":"2022-11-03T23:22:33Z","timestamp":1667517753000},"page":"114566-114585","source":"Crossref","is-referenced-by-count":13,"title":["Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories"],"prefix":"10.1109","volume":"10","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-8613-5042","authenticated-orcid":false,"given":"Golnaz","family":"Korkian","sequence":"first","affiliation":[{"name":"Computer Architecture Department, Facultad de Inform&#x00E1;tica, Universidad Complutense de Madrid (UCM), Madrid, Spain"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0856-8787","authenticated-orcid":false,"given":"Daniel","family":"Leon","sequence":"additional","affiliation":[{"name":"Higher Polytechnic School, Universidad Francisco de Vitoria, Madrid, Spain"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1509-5201","authenticated-orcid":false,"given":"Francisco J.","family":"Franco","sequence":"additional","affiliation":[{"name":"Department of Structure of Matter, Thermal Physics, and Electronics, Facultad de Ciencias F&#x00ED;sicas, Universidad Complutense de Madrid (UCM), Madrid, Spain"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4977-9556","authenticated-orcid":false,"given":"Juan C.","family":"Fabero","sequence":"additional","affiliation":[{"name":"Computer Architecture Department, Facultad de Inform&#x00E1;tica, Universidad Complutense de Madrid (UCM), Madrid, Spain"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5088-4057","authenticated-orcid":false,"given":"Manon","family":"Letiche","sequence":"additional","affiliation":[{"name":"Institut Laue-Langevin (ILL), Grenoble, France"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0261-2265","authenticated-orcid":false,"given":"Yolanda","family":"Morilla","sequence":"additional","affiliation":[{"name":"Centro Nacional de Aceleradores, Universidad de Sevilla, Seville, Spain"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3800-1757","authenticated-orcid":false,"given":"Pedro","family":"Martin-Holgado","sequence":"additional","affiliation":[{"name":"Centro Nacional de Aceleradores, Universidad de Sevilla, Seville, Spain"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1856-1071","authenticated-orcid":false,"given":"Helmut","family":"Puchner","sequence":"additional","affiliation":[{"name":"Infineon Technologies, Memory Solutions, and Aerospace &#x0026; Defense, San Jose, CA, USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9774-4609","authenticated-orcid":false,"given":"Hortensia","family":"Mecha","sequence":"additional","affiliation":[{"name":"Computer Architecture Department, Facultad de Inform&#x00E1;tica, Universidad Complutense de Madrid (UCM), Madrid, Spain"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7855-1051","authenticated-orcid":false,"given":"Juan A.","family":"Clemente","sequence":"additional","affiliation":[{"name":"Computer Architecture Department, Facultad de Inform&#x00E1;tica, Universidad Complutense de Madrid (UCM), Madrid, Spain"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref73","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2018.2800905"},{"key":"ref72","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2015.2486763"},{"key":"ref71","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2022.3153795"},{"key":"ref70","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2003.813137"},{"key":"ref76","first-page":"132","author":"bolinder","year":"2013","journal-title":"Atmospheric radiation effects study on avionics An analysis of NFF errors"},{"key":"ref77","doi-asserted-by":"publisher","DOI":"10.1038\/s41598-020-67257-2"},{"key":"ref74","doi-asserted-by":"publisher","DOI":"10.1109\/REDW.2013.6658188"},{"key":"ref39","year":"2014","journal-title":"HXNV0100 1Megabit 64K&#x00D7;16 Non-Volatile MagnetoResistive RAM Datasheet"},{"key":"ref75","article-title":"A radiation hardened hybrid spintronic\/CMOS nonvolatile unit using magnetic tunnel junctions","volume":"47","author":"zhao","year":"2014","journal-title":"J Phys D Appl Phys"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.66.014407"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2012.2224377"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/CDE52135.2021.9455719"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2019.113443"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2021.114347"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/AERO.2013.6507427"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2014.2362538"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1063\/1.4875748"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2013.2289369"},{"key":"ref60","year":"2018","journal-title":"1 Mb High Speed Quad SPI MRAM Datasheet"},{"key":"ref62","doi-asserted-by":"publisher","DOI":"10.1016\/j.nimb.2010.02.091"},{"key":"ref61","year":"2020","journal-title":"4 Mb SPI Serial Interface Memory Data Sheet"},{"key":"ref63","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2020.3023287"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2017.2721980"},{"key":"ref64","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2022.3140473"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2014.2321833"},{"key":"ref65","doi-asserted-by":"publisher","DOI":"10.1109\/RADECS45761.2018.9328656"},{"key":"ref66","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2018.2813367"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2014.2361488"},{"key":"ref67","year":"2002"},{"key":"ref68","article-title":"PTB contribution to the key comparison CCRI (III)-K11. Comparison of neutron fluence measurements for neutron energies of 27 keV, 565 keV, 2.5 MeV and 17 MeV","author":"nolte","year":"2018","journal-title":"PTB-Bericht Neutronenphysik Fachverlag NW in der Carl"},{"key":"ref69","author":"schlegel","year":"2005","journal-title":"TARGET User&#x2019;s Manual"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1089\/space.2016.0027"},{"key":"ref1","year":"2020","journal-title":"How to Do Business in Space?"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2019.02.010"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/TCT.1971.1083337"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2015.03.001"},{"key":"ref24","author":"xie","year":"2013","journal-title":"Emerging Memory Technologies Design Architecture and Applications"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1038\/nature06932"},{"key":"ref26","author":"abdelwahed","year":"2018","journal-title":"Addressing the RRAM reliability and radiation soft-errors in the memory systems"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6641\/aa6124"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1109\/REDW.2012.6353717"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2019.06.039"},{"key":"ref59","year":"2016","journal-title":"Everspin SPI MRAM Evaluation Board User Guide MR25H00-EVAL"},{"key":"ref58","year":"2016","journal-title":"Everspin Quad SPI MRAM Evaluation Board User Guide MR10Q010-EVAL1"},{"key":"ref57","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2014.2363123"},{"key":"ref56","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2013.2239311"},{"key":"ref55","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2012.2224375"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2012.2223487"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2021.3057348"},{"key":"ref52","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.56.0802B4"},{"key":"ref10","year":"2015","journal-title":"F-RAM Technology Brief"},{"key":"ref11","author":"scheick","year":"2002","journal-title":"SEU evaluation of FeRAM memories for space applications"},{"key":"ref40","first-page":"6","article-title":"A 0.18 ?m 4Mb toggling MRAM","author":"durlam","year":"2003","journal-title":"IEDM Tech Dig"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2018.12.004"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/REDW.2015.7336734"},{"key":"ref14","first-page":"1","article-title":"Heavy-ion radiation impact on a 4 Mb FRAM under different test conditions","author":"gupta","year":"2015","journal-title":"Proc 15th Eur Conf Radiat Effects Compon Syst (RADECS)"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/REDW.2008.10"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2018.2797543"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2008.2006052"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/RADECS.2007.5205525"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2017.2655302"},{"key":"ref4","author":"buck","year":"1952","journal-title":"Ferroelectrics for Digital Information Storage and Switching"},{"key":"ref3","year":"2021","journal-title":"Space Radiation Effects On Electronics&#x2014;Single Event Effects"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2010.2084101"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1063\/1.2336999"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2021.3074139"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1109\/REDW.2019.8906645"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2714(01)00049-X"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/23.299789"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1109\/RADECS.2007.5205554"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1109\/NSREC.2018.8584321"},{"key":"ref48","first-page":"1","article-title":"NASA Goddard space flight Center&#x2019;s compendium of recent single event effects results","author":"o\u2019bryan","year":"2018","journal-title":"Proc IEEE Nuclear and Space Radiation Effects (NSREC 02)"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1109\/REDW.2010.5619499"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2016.2590142"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1109\/TMAG.2004.840847"},{"key":"ref44","first-page":"2","article-title":"Manufacturable 22 nm FD-SOI embedded MRAM technology for industrial-grade MCU and IoT applications","author":"naik","year":"2019","journal-title":"IEDM Tech Dig"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19573.2019.8993516"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/9668973\/09931015.pdf?arnumber=9931015","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,12,16]],"date-time":"2022-12-16T17:43:28Z","timestamp":1671212608000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9931015\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022]]},"references-count":77,"URL":"https:\/\/doi.org\/10.1109\/access.2022.3217527","relation":{},"ISSN":["2169-3536"],"issn-type":[{"value":"2169-3536","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022]]}}}