{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,6]],"date-time":"2026-05-06T02:59:30Z","timestamp":1778036370999,"version":"3.51.4"},"reference-count":27,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2023,1,1]],"date-time":"2023-01-01T00:00:00Z","timestamp":1672531200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by-nc-nd\/4.0\/"}],"funder":[{"name":"Key-Area Research and Development Program of Guangdong Province","award":["2020B010171002"],"award-info":[{"award-number":["2020B010171002"]}]},{"name":"Key-Area Research and Development Program of Guangdong Province","award":["2019B010128002"],"award-info":[{"award-number":["2019B010128002"]}]},{"name":"Guangdong Province Basic and Applied Technology Research Fund Project","award":["2022A1515010127"],"award-info":[{"award-number":["2022A1515010127"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2023]]},"DOI":"10.1109\/access.2023.3336990","type":"journal-article","created":{"date-parts":[[2023,11,27]],"date-time":"2023-11-27T19:58:05Z","timestamp":1701115085000},"page":"134230-134238","source":"Crossref","is-referenced-by-count":6,"title":["Enhancement-Mode HEMT Performance and Mitigating Delay Through Double-Heterojunction With Connect Channel Utilization for Trap Effect Reduction"],"prefix":"10.1109","volume":"11","author":[{"given":"Longfei","family":"Yang","sequence":"first","affiliation":[{"name":"Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4136-1123","authenticated-orcid":false,"given":"Huiqing","family":"Sun","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0009-0000-0724-7629","authenticated-orcid":false,"given":"Ruipeng","family":"Lv","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhen","family":"Liu","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yuanhao","family":"Zhang","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Penglin","family":"Wang","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5081-6102","authenticated-orcid":false,"given":"Yuan","family":"Li","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yong","family":"Huang","sequence":"additional","affiliation":[{"name":"Guangdong Polytechnic Normal University, Guangzhou, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5563-3719","authenticated-orcid":false,"given":"Zhiyou","family":"Guo","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.3390\/cryst12111581"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1016\/j.mssp.2022.106982"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1016\/j.aeue.2019.153040"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2021.111508"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/access.2023.3277200"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/lmwt.2023.3268184"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/led.2013.2249038"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2022.3228495"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2023.3257282"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/iedm45625.2022.10019437"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1016\/j.matpr.2020.12.1076"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/devic57758.2023.10134842"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/16.766866"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.7567\/1882-0786\/ab1cfa"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/jeds.2018.2859769"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/pee.2019.8923198"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.3390\/mi13122133"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/access.2021.3139443"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1063\/1.4913916"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2017.2752859"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2005.844791"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/aespc44649.2018.9033336"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/led.2021.3087785"},{"key":"ref24","first-page":"185","article-title":"Normally-off AlGaN\/GaN HFET with p-type Ga Gate and AlGaN buffer","volume-title":"Proc. 6th Int. Conf. Integr. Power Electron. Syst. (CIPS)","author":"Hilt"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.50.104303"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2274326"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2008.922017"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/10005208\/10328855.pdf?arnumber=10328855","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,1,12]],"date-time":"2024-01-12T01:48:13Z","timestamp":1705024093000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10328855\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023]]},"references-count":27,"URL":"https:\/\/doi.org\/10.1109\/access.2023.3336990","relation":{},"ISSN":["2169-3536"],"issn-type":[{"value":"2169-3536","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023]]}}}