{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,30]],"date-time":"2026-01-30T04:14:36Z","timestamp":1769746476421,"version":"3.49.0"},"reference-count":20,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2024,1,1]],"date-time":"2024-01-01T00:00:00Z","timestamp":1704067200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by-nc-nd\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100007053","name":"Korea Institute of Energy Technology Evaluation and Planning","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100007053","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100007053","name":"Korea Government Ministry of Trade, Industry and Energy","doi-asserted-by":"publisher","award":["20225500000090"],"award-info":[{"award-number":["20225500000090"]}],"id":[{"id":"10.13039\/501100007053","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2024]]},"DOI":"10.1109\/access.2024.3351744","type":"journal-article","created":{"date-parts":[[2024,1,9]],"date-time":"2024-01-09T20:37:56Z","timestamp":1704832676000},"page":"7540-7550","source":"Crossref","is-referenced-by-count":7,"title":["Design and Evaluation of High-Speed Overcurrent and Short-Circuit Detection Circuits With High Noise Margin for WBG Power Semiconductor Devices"],"prefix":"10.1109","volume":"12","author":[{"ORCID":"https:\/\/orcid.org\/0009-0004-9314-056X","authenticated-orcid":false,"given":"Hae-Chan","family":"Park","sequence":"first","affiliation":[{"name":"Department of Electrical and Biomedical Engineering, Hanyang University, Seoul, South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0009-0006-0093-6548","authenticated-orcid":false,"given":"Myeong-Jun","family":"Cha","sequence":"additional","affiliation":[{"name":"Department of Electrical and Biomedical Engineering, Hanyang University, Seoul, South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Seon-Ho","family":"Jeon","sequence":"additional","affiliation":[{"name":"Department of Electrical and Biomedical Engineering, Hanyang University, Seoul, South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3753-7720","authenticated-orcid":false,"given":"Rae-Young","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Electrical and Biomedical Engineering, Hanyang University, Seoul, South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1002\/9781118844779.ch01"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2018.2879289"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2016.7855410"},{"key":"ref4","first-page":"1","article-title":"Dispersion of electrical characteristics and short-circuit robustness of 600 V emode GaN transistors","volume-title":"Proc. Int. Exhib. Conf. Power Electron., Intell. Motion, Renew. Energy Energy Manag.","author":"Landel"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2015.2416358"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/28.370271"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2014.6953784"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2018.8557677"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2018.8558252"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA.2017.8170560"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2013.2297304"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/APEC42165.2021.9487072"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/OJPEL.2021.3134498"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2020.3013984"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2020.2968865"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/IWIPP50752.2022.9894118"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2023.3293096"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2022.3215160"},{"key":"ref19","volume-title":"1EDIxxI12MH\u2014EiceDRIVER? 1EDI Compact Single Channel IGBT Gate Driver IC With Clamp in Wide Body Package","year":"2017"},{"key":"ref20","volume-title":"C3M0021120K\u2014Silicon Carbide Power MOSFET","year":"2023"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6287639\/10380310\/10385085.pdf?arnumber=10385085","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,1,19]],"date-time":"2024-01-19T18:52:42Z","timestamp":1705690362000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10385085\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024]]},"references-count":20,"URL":"https:\/\/doi.org\/10.1109\/access.2024.3351744","relation":{},"ISSN":["2169-3536"],"issn-type":[{"value":"2169-3536","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024]]}}}