{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T20:23:30Z","timestamp":1740169410549,"version":"3.37.3"},"reference-count":24,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2024,1,1]],"date-time":"2024-01-01T00:00:00Z","timestamp":1704067200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by-nc-nd\/4.0\/"}],"funder":[{"DOI":"10.13039\/100004358","name":"Samsung","doi-asserted-by":"publisher","award":["IO210221-08433-01"],"award-info":[{"award-number":["IO210221-08433-01"]}],"id":[{"id":"10.13039\/100004358","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2024]]},"DOI":"10.1109\/access.2024.3479235","type":"journal-article","created":{"date-parts":[[2024,10,14]],"date-time":"2024-10-14T17:25:51Z","timestamp":1728926751000},"page":"153203-153208","source":"Crossref","is-referenced-by-count":0,"title":["Performance Improvement in DRAM Cell Using Novel Nitride\/Metal Spacers Structure"],"prefix":"10.1109","volume":"12","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-6332-2259","authenticated-orcid":false,"given":"Seung-Geun","family":"Jung","sequence":"first","affiliation":[{"name":"School of Electrical Engineering, Korea University, Seoul, South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0009-0001-3496-6677","authenticated-orcid":false,"given":"Seong-Ji","family":"Min","sequence":"additional","affiliation":[{"name":"School of Electrical Engineering, Korea University, Seoul, South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9446-5981","authenticated-orcid":false,"given":"Hyun-Yong","family":"Yu","sequence":"additional","affiliation":[{"name":"School of Electrical Engineering, Korea University, Seoul, South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1145\/3140659.3080244"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/jetcas.2021.3127517"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/iedm.1995.499365"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/16.678551"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-017-0005-9"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/tnano.2004.842073"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/rams.2011.5754522"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2010.2050104"},{"key":"ref9","first-page":"1","article-title":"S-RCAT (sphere-shaped-recess-channel-array transistor) technology for 70 nm DRAM feature size and beyond","volume-title":"Proc. Symp. VLSI Technol.","author":"Kim"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.201670610"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2755050"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/access.2023.3300443"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2014.6860602"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2004.835162"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2271274"},{"volume-title":"Sentaurus Device User Guide Version: H-2013.03","year":"2013","key":"ref16"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2060726"},{"article-title":"Simulation and design of germanium-based MOSFETs for channel lengths of 100 nm and below","year":"2007","author":"Arnold","key":"ref18"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2021.3066140"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6641\/aa6fca"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2045731"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.2006864"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2184763"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2276888"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/6287639\/10380310\/10716478.pdf?arnumber=10716478","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,11,27]],"date-time":"2024-11-27T00:47:39Z","timestamp":1732668459000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10716478\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024]]},"references-count":24,"URL":"https:\/\/doi.org\/10.1109\/access.2024.3479235","relation":{},"ISSN":["2169-3536"],"issn-type":[{"type":"electronic","value":"2169-3536"}],"subject":[],"published":{"date-parts":[[2024]]}}}