{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,19]],"date-time":"2026-05-19T00:32:52Z","timestamp":1779150772687,"version":"3.51.4"},"reference-count":57,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2025,1,1]],"date-time":"2025-01-01T00:00:00Z","timestamp":1735689600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by-nc-nd\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100000780","name":"European Commission","doi-asserted-by":"publisher","award":["101075709"],"award-info":[{"award-number":["101075709"]}],"id":[{"id":"10.13039\/501100000780","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Research and Innovation NOP Action IV.4"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2025]]},"DOI":"10.1109\/access.2025.3555931","type":"journal-article","created":{"date-parts":[[2025,3,29]],"date-time":"2025-03-29T03:54:54Z","timestamp":1743220494000},"page":"59264-59274","source":"Crossref","is-referenced-by-count":3,"title":["The Ferro-Power MOSFET: Enhancing Short-Circuit Robustness in Power Switches With a Ferroelectric Gate Stack"],"prefix":"10.1109","volume":"13","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-6912-5413","authenticated-orcid":false,"given":"Marco","family":"Boccarossa","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering and Information Technologies, University of Naples Federico II, Naples, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4660-5163","authenticated-orcid":false,"given":"Luca","family":"Maresca","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering and Information Technologies, University of Naples Federico II, Naples, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6285-4242","authenticated-orcid":false,"given":"Alessandro","family":"Borghese","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering and Information Technologies, University of Naples Federico II, Naples, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5926-4911","authenticated-orcid":false,"given":"Michele","family":"Riccio","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering and Information Technologies, University of Naples Federico II, Naples, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9350-5483","authenticated-orcid":false,"given":"Giovanni","family":"Breglio","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering and Information Technologies, University of Naples Federico II, Naples, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1400-8380","authenticated-orcid":false,"given":"Andrea","family":"Irace","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering and Information Technologies, University of Naples Federico II, Naples, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8983-3257","authenticated-orcid":false,"given":"Giovanni A.","family":"Salvatore","sequence":"additional","affiliation":[{"name":"Department of Molecular Science and Nanosystems, Ca’ Foscari University of Venice, Venice, Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/aero55745.2023.10115580"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1016\/j.procir.2016.09.025"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/smicnd.2012.6400696"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1049\/iet-pel.2019.0587"},{"key":"ref5","first-page":"1","article-title":"Short-circuit capability: Benchmarking SiC and GaN devices with Si-based technologies","volume-title":"Proc. PCIM Eur., Int. Exhib. Conf. Power Electron., Intell. Motion, Renew. Energy Energy Manage.","author":"Yu"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/ispsd46842.2020.9170094"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/iciea.2017.8282866"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2018.8393685"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.23919\/ISPSD50666.2021.9452253"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2005.07.087"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.4028\/p-fnekfr"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2015.2506628"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/28.370271"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/ISIE.2010.5637049"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2021.3137594"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/APEC.2012.6166172"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2024.3430897"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1149\/2.010304jss"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2020.2976148"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2005.04.084"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1063\/1.5108562"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1021\/nl071804g"},{"key":"ref23","first-page":"16.3.1","article-title":"Metal-ferroelectric-meta-oxide-semiconductor field effect transistor with sub-60 mV\/decade subthreshold swing and internal voltage amplification","volume-title":"IEDM Tech. Dig.","author":"Rusu"},{"key":"ref24","first-page":"491","article-title":"Silicon carbide power devices","volume-title":"Springer Handbook of Semiconductor Devices","author":"Baliga","year":"2022"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1063\/1.2395597"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2014.6856032"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1023\/B:JECR.0000015661.81386.e6"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.3390\/nano15050343"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.3390\/ma15062097"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1080\/21870764.2022.2034250"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/ISAF51943.2021.9477328"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1080\/10584580903324568"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1063\/1.3467471"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2160868"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1016\/j.nanoen.2015.10.005"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1103\/physrevb.90.140103"},{"key":"ref37","volume-title":"C2M0080120D Datasheet, Rev. 6","year":"2024"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2015.7123460"},{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2016.2563220"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2012.06.151"},{"key":"ref41","volume-title":"Sentaurus Device User Guide Version V-2023","year":"2023"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1016\/j.nanoen.2020.104733"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.55.08PB01"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1063\/1.4973928"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1016\/j.mser.2010.12.001"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1039\/D0TC05008C"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1109\/THERMINIC60375.2023.10325871"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.23919\/EPE.2019.8914891"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2021.3123289"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2022.3144995"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1109\/ispsd.2014.6855978"},{"key":"ref52","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2020.113943"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2022.114706"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1149\/2.0081505jss"},{"key":"ref55","doi-asserted-by":"publisher","DOI":"10.1063\/5.0052129"},{"key":"ref56","doi-asserted-by":"publisher","DOI":"10.1016\/j.nanoen.2017.04.052"},{"key":"ref57","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.202200265"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/6287639\/10820123\/10945321.pdf?arnumber=10945321","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,4,10]],"date-time":"2025-04-10T04:42:34Z","timestamp":1744260154000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10945321\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025]]},"references-count":57,"URL":"https:\/\/doi.org\/10.1109\/access.2025.3555931","relation":{},"ISSN":["2169-3536"],"issn-type":[{"value":"2169-3536","type":"electronic"}],"subject":[],"published":{"date-parts":[[2025]]}}}