{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,13]],"date-time":"2026-01-13T05:22:28Z","timestamp":1768281748453,"version":"3.49.0"},"reference-count":46,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","license":[{"start":{"date-parts":[[2025,1,1]],"date-time":"2025-01-01T00:00:00Z","timestamp":1735689600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/legalcode"}],"funder":[{"DOI":"10.13039\/100001243","name":"Micron Foundation","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100001243","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Access"],"published-print":{"date-parts":[[2025]]},"DOI":"10.1109\/access.2025.3589533","type":"journal-article","created":{"date-parts":[[2025,7,16]],"date-time":"2025-07-16T17:39:52Z","timestamp":1752687592000},"page":"129493-129503","source":"Crossref","is-referenced-by-count":1,"title":["Simulation of E-Mode \u03b2 -Ga<sub>2<\/sub>O<sub>3<\/sub> Interlayer-Based Vertical Trench Power MOSFET With Fast-Switching Performance at High Temperatures"],"prefix":"10.1109","volume":"13","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-8325-6321","authenticated-orcid":false,"given":"Xiaoqing","family":"Chen","sequence":"first","affiliation":[{"name":"Department of Electrical and Computer Engineering, University of Idaho, Moscow, ID, USA"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9697-5002","authenticated-orcid":false,"given":"Feng","family":"Li","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, University of Idaho, Moscow, ID, USA"}]},{"given":"Herbert","family":"Hess","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, University of Idaho, Moscow, ID, USA"}]}],"member":"263","reference":[{"key":"ref1","volume-title":"Wide-Bandgap Power Semiconductor Devices Market Analysis\u2014China, U.S., Japan, U.K., Germany\u2014Size and Forecast 2024\u20132028","year":"2025"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.4071\/001c.89108"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/tcpmt.2022.3210477"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.202300844"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1063\/1.5006941"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/drc.2017.7999397"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/med.2024.3456301"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1149\/2.0031707jss"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1063\/5.0113744"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1116\/6.0002645"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ispsd.2019.8757633"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/drc.2017.7999512"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/iedm19573.2019.8993526"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.7567\/apex.10.124201"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.35848\/1882-0786\/acc30e"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/led.2018.2884542"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/led.2019.2962657"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/led.2023.3235777"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1063\/5.0130292"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/drc.2016.7548466"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/led.2016.2616508"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/led.2017.2649599"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/drc.2017.7999410"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1016\/j.prime.2023.100218"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1063\/1.4827201"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1063\/5.0031484"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1063\/5.0239454"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1063\/5.0234267"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1063\/5.0256525"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1088\/2631-8695\/acc00c"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/access.2024.3377563"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1063\/1.4968550"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1016\/j.jmrt.2022.10.110"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2023.3328806"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1016\/j.jcrysgro.2016.04.022"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1063\/1.4916078"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1063\/1.4927742"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1016\/bs.semsem.2021.06.001"},{"key":"ref39","volume-title":"SentaurusTM Device User Guide Version R-2020.09","year":"2020"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1088\/0268-1242\/31\/3\/035023"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1088\/1361-648x\/aa6f66"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1109\/led.2019.2926202"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1007\/978-0-387-47314-7"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1109\/apec48143.2025.10977426"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1063\/1.5116828"},{"key":"ref46","volume-title":"Power Electronics","author":"Hart","year":"2011"}],"container-title":["IEEE Access"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/6287639\/10820123\/11082120.pdf?arnumber=11082120","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,7,26]],"date-time":"2025-07-26T07:41:18Z","timestamp":1753515678000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/11082120\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025]]},"references-count":46,"URL":"https:\/\/doi.org\/10.1109\/access.2025.3589533","relation":{},"ISSN":["2169-3536"],"issn-type":[{"value":"2169-3536","type":"electronic"}],"subject":[],"published":{"date-parts":[[2025]]}}}