{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,23]],"date-time":"2024-10-23T07:57:38Z","timestamp":1729670258190,"version":"3.28.0"},"reference-count":17,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2011,10]]},"DOI":"10.1109\/asicon.2011.6157265","type":"proceedings-article","created":{"date-parts":[[2012,2,28]],"date-time":"2012-02-28T15:44:14Z","timestamp":1330443854000},"page":"555-557","source":"Crossref","is-referenced-by-count":0,"title":["Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs"],"prefix":"10.1109","author":[{"given":"Guanghui","family":"Mei","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Peicheng","family":"Li","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Guangxi","family":"Hu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ran","family":"Liu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Tingao","family":"Tang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"17","doi-asserted-by":"crossref","first-page":"2846","DOI":"10.1109\/TED.2008.2005163","volume":"55","author":"yu","year":"2008","journal-title":"IEEE Trans Electron Devices"},{"journal-title":"The Physics of Low-Dimensional Semiconductors","year":"1998","author":"davies","key":"15"},{"journal-title":"Fundamentals of Modern VLSI Devices","year":"1998","author":"taur","key":"16"},{"journal-title":"Jpn J Appl Phys","year":"0","author":"mei","key":"13"},{"key":"14","first-page":"1919","author":"mei","year":"2010","journal-title":"IEEE Proc ICSICT Shanghai China"},{"key":"11","doi-asserted-by":"crossref","first-page":"26","DOI":"10.1109\/LED.2004.839624","author":"trivedi","year":"2005","journal-title":"IEEE Electron Device Lett"},{"key":"12","doi-asserted-by":"crossref","first-page":"34001","DOI":"10.1143\/JJAP.49.034001","volume":"49","author":"hu","year":"2010","journal-title":"Jpn J Appl Phys"},{"key":"3","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2010.11.002"},{"key":"2","doi-asserted-by":"crossref","first-page":"2715","DOI":"10.1109\/TED.2007.904410","volume":"54","author":"yu","year":"2007","journal-title":"IEEE Trans Electron Devices"},{"key":"1","doi-asserted-by":"crossref","first-page":"1161","DOI":"10.1109\/TED.2006.872093","volume":"53","author":"lu","year":"2006","journal-title":"IEEE Trans Electron Devices"},{"key":"10","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.46.1437"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2006.890264"},{"key":"6","doi-asserted-by":"crossref","first-page":"3467","DOI":"10.1109\/TED.2008.2006535","volume":"55","author":"kloes","year":"2008","journal-title":"IEEE Trans Electron Devices"},{"key":"5","doi-asserted-by":"crossref","first-page":"3494","DOI":"10.1109\/TED.2008.2006544","volume":"55","author":"liu","year":"2008","journal-title":"IEEE Trans Electron Devices"},{"key":"4","doi-asserted-by":"crossref","first-page":"511","DOI":"10.1016\/j.sse.2003.09.019","volume":"48","author":"gili","year":"2004","journal-title":"Solid-State Electron"},{"key":"9","doi-asserted-by":"crossref","first-page":"1478","DOI":"10.1109\/TED.2007.896595","volume":"54","author":"he","year":"2007","journal-title":"IEEE Trans Electron Devices"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2136343"}],"event":{"name":"2011 IEEE 9th International Conference on ASIC (ASICON 2011)","start":{"date-parts":[[2011,10,25]]},"location":"Xiamen, China","end":{"date-parts":[[2011,10,28]]}},"container-title":["2011 9th IEEE International Conference on ASIC"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/6153219\/6157041\/06157265.pdf?arnumber=6157265","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,20]],"date-time":"2017-06-20T10:57:14Z","timestamp":1497956234000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6157265\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2011,10]]},"references-count":17,"URL":"https:\/\/doi.org\/10.1109\/asicon.2011.6157265","relation":{},"subject":[],"published":{"date-parts":[[2011,10]]}}}