{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,8]],"date-time":"2024-09-08T00:16:50Z","timestamp":1725754610930},"reference-count":8,"publisher":"IEEE","license":[{"start":{"date-parts":[[2015,11,1]],"date-time":"2015-11-01T00:00:00Z","timestamp":1446336000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2015,11,1]],"date-time":"2015-11-01T00:00:00Z","timestamp":1446336000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,11]]},"DOI":"10.1109\/asicon.2015.7517042","type":"proceedings-article","created":{"date-parts":[[2016,7,26]],"date-time":"2016-07-26T20:38:31Z","timestamp":1469565511000},"page":"1-3","source":"Crossref","is-referenced-by-count":1,"title":["Resistive random access memory with high selectivity and ON\/OFF ratio amplification sensing"],"prefix":"10.1109","author":[{"given":"Sung Hyun","family":"Jo","sequence":"first","affiliation":[{"name":"Crosbar Inc, 3200 Patrick Henry Drive, Suite 110 Santa Clara, CA 95054"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hagop","family":"Nazarian","sequence":"additional","affiliation":[{"name":"Crosbar Inc, 3200 Patrick Henry Drive, Suite 110 Santa Clara, CA 95054"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","first-page":"37","article-title":"Varistor-type bidirectional switch (IMAX>107A\/cm, selectivity 104) for 3D bipolar resistive memory arrays","author":"lee","year":"2012","journal-title":"VLSI Tech Symp"},{"doi-asserted-by":"publisher","key":"ref3","DOI":"10.1109\/LED.2012.2209394"},{"doi-asserted-by":"publisher","key":"ref6","DOI":"10.1038\/nmat2748"},{"doi-asserted-by":"publisher","key":"ref5","DOI":"10.1109\/LED.2011.2163697"},{"doi-asserted-by":"publisher","key":"ref8","DOI":"10.1109\/VLSIT.2015.7223715"},{"key":"ref7","first-page":"240t","article-title":"Performance of threshold switching in chalcogenide glass for 3D stackable selector","author":"kim","year":"2013","journal-title":"VLSI Tech Symp"},{"doi-asserted-by":"publisher","key":"ref2","DOI":"10.1109\/TED.2015.2426717"},{"key":"ref1","first-page":"6.7.1","article-title":"3D-stackable crossbar resistive memory based on field assisted superlinear threshold (FAST) selector","author":"jo","year":"2014","journal-title":"IEDM Tech Dig"}],"event":{"name":"2015 IEEE 11th International Conference on ASIC (ASICON )","start":{"date-parts":[[2015,11,3]]},"location":"Chengdu, China","end":{"date-parts":[[2015,11,6]]}},"container-title":["2015 IEEE 11th International Conference on ASIC (ASICON)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7506193\/7516874\/07517042.pdf?arnumber=7517042","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,5,3]],"date-time":"2024-05-03T18:28:33Z","timestamp":1714760913000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/7517042\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,11]]},"references-count":8,"URL":"https:\/\/doi.org\/10.1109\/asicon.2015.7517042","relation":{},"subject":[],"published":{"date-parts":[[2015,11]]}}}