{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,22]],"date-time":"2024-10-22T17:06:57Z","timestamp":1729616817900,"version":"3.28.0"},"reference-count":12,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,11]]},"DOI":"10.1109\/asicon.2015.7517090","type":"proceedings-article","created":{"date-parts":[[2016,7,26]],"date-time":"2016-07-26T20:38:31Z","timestamp":1469565511000},"page":"1-4","source":"Crossref","is-referenced-by-count":0,"title":["Ultra low power circuits design based on III-V group heterojunction tunnel field effect transistor"],"prefix":"10.1109","author":[{"given":"Jipan","family":"Huang","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fang","family":"Gao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xin'an","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hongying","family":"Chen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"crossref","first-page":"2095","DOI":"10.1109\/JPROC.2010.2070470","article-title":"Low-Voltage Tunnel Transistors for Beyond CMOS Logic","volume":"98","author":"seabaugh","year":"2011","journal-title":"Proceedings of the IEEE"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1038\/nature10679"},{"key":"ref10","first-page":"181","article-title":"A novel Si-tunnel FET based SRAM design for ultra-low power 0.3 V VDD applications","author":"singh","year":"2010","journal-title":"Proc Asia-Pacific Design Automation Conf"},{"key":"ref6","first-page":"2092","article-title":"A Perspective Review of Tunnel Field Effect Transistor with Steeper Switching Behavior and Low off Current (IOFF) for Ultra Low Power Applications","volume":"6","author":"maria jossy","year":"2014","journal-title":"International Journal of Engineering and Technology (IJET)"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ASPDAC.2010.5419897"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2013.2252317"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1987.1052809"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2014.12.002"},{"key":"ref7","first-page":"124","article-title":"Comparison of performance, switching energy and process variations for the TFET and MOSFET in logic","author":"avci","year":"2011","journal-title":"VLSI Symp Tech Dig"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2006.871855"},{"key":"ref9","first-page":"25","article-title":"Continuous semiempirical model for the current-voltage characteristics of tunnel fets","author":"lu","year":"2015","journal-title":"15th Int Conf ULIS"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1735965"}],"event":{"name":"2015 IEEE 11th International Conference on ASIC (ASICON )","start":{"date-parts":[[2015,11,3]]},"location":"Chengdu, China","end":{"date-parts":[[2015,11,6]]}},"container-title":["2015 IEEE 11th International Conference on ASIC (ASICON)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7506193\/7516874\/07517090.pdf?arnumber=7517090","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,24]],"date-time":"2017-06-24T19:15:11Z","timestamp":1498331711000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7517090\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,11]]},"references-count":12,"URL":"https:\/\/doi.org\/10.1109\/asicon.2015.7517090","relation":{},"subject":[],"published":{"date-parts":[[2015,11]]}}}