{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,27]],"date-time":"2026-01-27T18:26:14Z","timestamp":1769538374580,"version":"3.49.0"},"reference-count":4,"publisher":"IEEE","license":[{"start":{"date-parts":[[2015,11,1]],"date-time":"2015-11-01T00:00:00Z","timestamp":1446336000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2015,11,1]],"date-time":"2015-11-01T00:00:00Z","timestamp":1446336000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,11]]},"DOI":"10.1109\/asicon.2015.7517150","type":"proceedings-article","created":{"date-parts":[[2016,7,26]],"date-time":"2016-07-26T16:38:31Z","timestamp":1469551111000},"page":"1-4","source":"Crossref","is-referenced-by-count":0,"title":["A new intrinsic parameter extraction approach for small-signal model of AlGaN\/GaN devices"],"prefix":"10.1109","author":[{"given":"Linghan","family":"Zhang","sequence":"first","affiliation":[{"name":"School of Information Science and Engineering, Southeast University, Nanjing 211100, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yunzhou","family":"Wang","sequence":"additional","affiliation":[{"name":"Jiulonghu Campus, Southeast University, Nanjing, Jiangsu Province, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yicong","family":"Liu","sequence":"additional","affiliation":[{"name":"Jiulonghu Campus, Southeast University, Nanjing, Jiangsu Province, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xusheng","family":"Tang","sequence":"additional","affiliation":[{"name":"Jiulonghu Campus, Southeast University, Nanjing, Jiangsu Province, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","first-page":"1393","article-title":"A New Simplified and Reliable HEMT Modelling Approach Using Pinched Cold Field FET S-Parameter","volume":"3","author":"mwena","year":"2000","journal-title":"Microwave Symposium Digest"},{"key":"ref3","doi-asserted-by":"crossref","first-page":"3440","DOI":"10.1109\/TMTT.2005.857332","article-title":"A New Small-Signal Modeling Approach Applied to GaN Devices","volume":"53","author":"kompa","year":"2005","journal-title":"IEEE Transactions on Microwave Theory and Techniques"},{"key":"ref2","doi-asserted-by":"crossref","first-page":"2949","DOI":"10.1109\/TMTT.2006.877047","article-title":"A Low Gate Bias Model Extraction Technique for AlGaN\/GaN HEMTs","volume":"54","author":"jarndal","year":"2006","journal-title":"IEEE Transactions on Microwave Theory and Techniques"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2010.2044630"}],"event":{"name":"2015 IEEE 11th International Conference on ASIC (ASICON )","location":"Chengdu, China","start":{"date-parts":[[2015,11,3]]},"end":{"date-parts":[[2015,11,6]]}},"container-title":["2015 IEEE 11th International Conference on ASIC (ASICON)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7506193\/7516874\/07517150.pdf?arnumber=7517150","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,1,27]],"date-time":"2026-01-27T05:15:10Z","timestamp":1769490910000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/7517150\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,11]]},"references-count":4,"URL":"https:\/\/doi.org\/10.1109\/asicon.2015.7517150","relation":{},"subject":[],"published":{"date-parts":[[2015,11]]}}}