{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,22]],"date-time":"2024-10-22T22:12:30Z","timestamp":1729635150364,"version":"3.28.0"},"reference-count":13,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,11]]},"DOI":"10.1109\/asicon.2015.7517161","type":"proceedings-article","created":{"date-parts":[[2016,7,26]],"date-time":"2016-07-26T16:38:31Z","timestamp":1469551111000},"page":"1-4","source":"Crossref","is-referenced-by-count":0,"title":["Using GIDL mechanism for low-power consumption and data retention time improvement in a double-gate nanowire TFT 1T-DRAM with Fin-Gate and Pillar-Body structure"],"prefix":"10.1109","author":[{"given":"Wei-Han","family":"Lee","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jyi-Tsong","family":"Lin","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yu-Chun","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Po-Hsieh","family":"Lin","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chien-Chia","family":"Lai","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yong-Huang","family":"Lin","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Tin-Chun","family":"Chang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2292316"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2372819"},{"journal-title":"Sentaurus TCAD","year":"2011","key":"ref12"},{"journal-title":"The International Technology Roadmap for Semiconductors (ITRS)-Table PIDS6","year":"2013","key":"ref13"},{"key":"ref4","first-page":"1","author":"song","year":"2008","journal-title":"Proc IEEE IEDM"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2010.2046743"},{"key":"ref6","doi-asserted-by":"crossref","first-page":"189","DOI":"10.1109\/LED.2008.2010345","volume":"30","author":"han","year":"2009","journal-title":"IEEE Electron Device Lett"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2006.870283"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2301913"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ICSICT.2014.7021376"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1016\/S0038-1101(00)00271-9"},{"key":"ref1","first-page":"635","author":"wann","year":"1933","journal-title":"IEDM Tech Dig"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2010.2098885"}],"event":{"name":"2015 IEEE 11th International Conference on ASIC (ASICON )","start":{"date-parts":[[2015,11,3]]},"location":"Chengdu, China","end":{"date-parts":[[2015,11,6]]}},"container-title":["2015 IEEE 11th International Conference on ASIC (ASICON)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7506193\/7516874\/07517161.pdf?arnumber=7517161","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,24]],"date-time":"2017-06-24T15:15:14Z","timestamp":1498317314000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7517161\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,11]]},"references-count":13,"URL":"https:\/\/doi.org\/10.1109\/asicon.2015.7517161","relation":{},"subject":[],"published":{"date-parts":[[2015,11]]}}}