{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,22]],"date-time":"2024-10-22T18:46:43Z","timestamp":1729622803022,"version":"3.28.0"},"reference-count":10,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2017,10]]},"DOI":"10.1109\/asicon.2017.8252401","type":"proceedings-article","created":{"date-parts":[[2018,1,17]],"date-time":"2018-01-17T22:22:30Z","timestamp":1516227750000},"page":"20-23","source":"Crossref","is-referenced-by-count":2,"title":["An efficient parity rearrangement coding scheme for RRAM thermal crosstalk effects"],"prefix":"10.1109","author":[{"given":"Yun","family":"Li","sequence":"first","affiliation":[]},{"given":"Hai-Hua","family":"Shen","sequence":"additional","affiliation":[]},{"given":"Ce","family":"Li","sequence":"additional","affiliation":[]},{"given":"Feng","family":"Zhang","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"crossref","first-page":"1315","DOI":"10.1109\/JSSC.2013.2247678","volume":"48","author":"xue","year":"2013","journal-title":"IEEE Journal of Solid-State Circuits"},{"key":"ref3","doi-asserted-by":"crossref","first-page":"27","DOI":"10.1049\/el.2015.2332","volume":"52","author":"xiang","year":"2016","journal-title":"Electronics Letters"},{"key":"ref10","doi-asserted-by":"crossref","first-page":"776","DOI":"10.1109\/TCSII.2013.2281767","volume":"60","author":"kim","year":"2013","journal-title":"IEEE Transactions on Circuits and Systems II Express Briefs"},{"key":"ref6","doi-asserted-by":"crossref","first-page":"833","DOI":"10.1038\/nmat2023","volume":"6","author":"waser","year":"2007","journal-title":"Nature Materials"},{"key":"ref5","doi-asserted-by":"crossref","first-page":"762","DOI":"10.1109\/LED.2013.2258653","volume":"34","author":"ninomiya","year":"2013","journal-title":"IEEE Electron Device Lett"},{"key":"ref8","doi-asserted-by":"crossref","first-page":"186","DOI":"10.1109\/TED.2008.2010583","volume":"56","author":"russo","year":"2009","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref7","first-page":"26","volume":"3","author":"lin","year":"2012","journal-title":"2012 International Electron Devices Meeting"},{"key":"ref2","doi-asserted-by":"crossref","first-page":"1137","DOI":"10.1109\/TED.2014.2305175","volume":"61","author":"yalon","year":"2014","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref9","doi-asserted-by":"crossref","first-page":"13504","DOI":"10.1038\/srep13504","author":"sun","year":"2015","journal-title":"Scientific renortsf"},{"key":"ref1","first-page":"1","author":"li","year":"2014","journal-title":"6th IEEE International Memory Workshop (IMW"}],"event":{"name":"2017 IEEE 12th International Conference on ASIC (ASICON)","start":{"date-parts":[[2017,10,25]]},"location":"Guiyang","end":{"date-parts":[[2017,10,28]]}},"container-title":["2017 IEEE 12th International Conference on ASIC (ASICON)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8240668\/8252386\/08252401.pdf?arnumber=8252401","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,10,9]],"date-time":"2019-10-09T13:29:07Z","timestamp":1570627747000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/8252401\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,10]]},"references-count":10,"URL":"https:\/\/doi.org\/10.1109\/asicon.2017.8252401","relation":{},"subject":[],"published":{"date-parts":[[2017,10]]}}}