{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,29]],"date-time":"2024-10-29T10:50:24Z","timestamp":1730199024971,"version":"3.28.0"},"reference-count":18,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2017,10]]},"DOI":"10.1109\/asicon.2017.8252681","type":"proceedings-article","created":{"date-parts":[[2018,1,17]],"date-time":"2018-01-17T17:22:30Z","timestamp":1516209750000},"page":"1137-1140","source":"Crossref","is-referenced-by-count":0,"title":["3D scaling for insulated gate bipolar transistors (IGBTs) with low V<inf>ce(sat)<\/inf>"],"prefix":"10.1109","author":[{"given":"K.","family":"Tsutsui","sequence":"first","affiliation":[]},{"given":"K.","family":"Kakushima","sequence":"additional","affiliation":[]},{"given":"T.","family":"Hoshii","sequence":"additional","affiliation":[]},{"given":"A.","family":"Nakajima","sequence":"additional","affiliation":[]},{"given":"S.","family":"Nishizawa","sequence":"additional","affiliation":[]},{"given":"H.","family":"Wakabayashi","sequence":"additional","affiliation":[]},{"given":"I.","family":"Muneta","sequence":"additional","affiliation":[]},{"given":"K.","family":"Sato","sequence":"additional","affiliation":[]},{"given":"T.","family":"Matsudai","sequence":"additional","affiliation":[]},{"given":"W.","family":"Saito","sequence":"additional","affiliation":[]},{"given":"T.","family":"Saraya","sequence":"additional","affiliation":[]},{"given":"K.","family":"Itou","sequence":"additional","affiliation":[]},{"given":"M.","family":"Fukui","sequence":"additional","affiliation":[]},{"given":"S.","family":"Suzuki","sequence":"additional","affiliation":[]},{"given":"M.","family":"Kobayashi","sequence":"additional","affiliation":[]},{"given":"T.","family":"Takakura","sequence":"additional","affiliation":[]},{"given":"T.","family":"Hiramoto","sequence":"additional","affiliation":[]},{"given":"A.","family":"Ogura","sequence":"additional","affiliation":[]},{"given":"Y.","family":"Numasawa","sequence":"additional","affiliation":[]},{"given":"I.","family":"Omura","sequence":"additional","affiliation":[]},{"given":"H.","family":"Ohashi","sequence":"additional","affiliation":[]},{"given":"H.","family":"Iwai","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","first-page":"203","author":"feng","year":"2016","journal-title":"Proc ISPSD"},{"key":"ref11","first-page":"17","author":"sumitomo","year":"2012","journal-title":"Proc ISPSD"},{"key":"ref12","first-page":"211","author":"eikyu","year":"2016","journal-title":"Proc ISPSD"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2012.10.020"},{"key":"ref14","first-page":"268","volume":"10","author":"kakushima","year":"2016","journal-title":"IEDM Tech Dig"},{"key":"ref15","first-page":"1933","article-title":"Microelectron","volume":"51","author":"tanaka","year":"2011","journal-title":"Reliability"},{"key":"ref16","first-page":"1640","author":"miyazaki","year":"2016","journal-title":"Proc IEEE APEC"},{"year":"0","key":"ref17"},{"year":"0","key":"ref18"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.201532873"},{"key":"ref3","first-page":"160","volume":"6","author":"imaizumi","year":"2013","journal-title":"IEDM Tech Dig"},{"key":"ref6","first-page":"229","volume":"9","author":"wong","year":"2015","journal-title":"IEDM Tech Dig"},{"key":"ref5","first-page":"41","volume":"16","author":"marcon","year":"2015","journal-title":"IEDM Tech Dig"},{"key":"ref8","first-page":"349","author":"takahasi","year":"1996","journal-title":"Proc ISPSD"},{"key":"ref7","first-page":"679","author":"kitagawa","year":"1993","journal-title":"IEDM Tech Dig"},{"key":"ref2","first-page":"1","volume":"1","author":"palmour","year":"2014","journal-title":"IEDM Tech Dig"},{"key":"ref1","first-page":"28","volume":"2","author":"rupp","year":"2014","journal-title":"IEDM Tech Dig"},{"key":"ref9","first-page":"355","author":"laska","year":"2000","journal-title":"Proc ISPSD"}],"event":{"name":"2017 IEEE 12th International Conference on ASIC (ASICON)","start":{"date-parts":[[2017,10,25]]},"location":"Guiyang","end":{"date-parts":[[2017,10,28]]}},"container-title":["2017 IEEE 12th International Conference on ASIC (ASICON)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8240668\/8252386\/08252681.pdf?arnumber=8252681","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2018,2,15]],"date-time":"2018-02-15T10:56:06Z","timestamp":1518692166000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/8252681\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,10]]},"references-count":18,"URL":"https:\/\/doi.org\/10.1109\/asicon.2017.8252681","relation":{},"subject":[],"published":{"date-parts":[[2017,10]]}}}