{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,21]],"date-time":"2025-09-21T17:24:00Z","timestamp":1758475440639,"version":"3.44.0"},"reference-count":14,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,10,1]],"date-time":"2019-10-01T00:00:00Z","timestamp":1569888000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,10,1]],"date-time":"2019-10-01T00:00:00Z","timestamp":1569888000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,10]]},"DOI":"10.1109\/asicon47005.2019.8983566","type":"proceedings-article","created":{"date-parts":[[2020,2,7]],"date-time":"2020-02-07T01:04:26Z","timestamp":1581037466000},"page":"1-4","source":"Crossref","is-referenced-by-count":5,"title":["High Reliability GaN FET Gate Drivers for Next-generation Power Electronics Technology"],"prefix":"10.1109","author":[{"given":"Xin","family":"Ming","sequence":"first","affiliation":[{"name":"State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu,China,610054"}]},{"given":"Zhi-Wen","family":"Zhang","sequence":"additional","affiliation":[{"name":"State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu,China,610054"}]},{"given":"Zi-Wei","family":"Fan","sequence":"additional","affiliation":[{"name":"State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu,China,610054"}]},{"given":"Yao","family":"Qin","sequence":"additional","affiliation":[{"name":"State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu,China,610054"}]},{"given":"Yuan-Yuan","family":"Liu","sequence":"additional","affiliation":[{"name":"State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu,China,610054"}]},{"given":"Bo","family":"Zhang","sequence":"additional","affiliation":[{"name":"State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu,China,610054"}]}],"member":"263","reference":[{"doi-asserted-by":"publisher","key":"ref10","DOI":"10.1109\/JSSC.2017.2749041"},{"key":"ref11","first-page":"250","article-title":"15.7 An 8.3 MHz GaN Power Converter Using Markov Continuous RSSM for 35dB?V Conducted EMI Attenuation and One-Cycle TON Rebalancing for 27.6 dB V° Jittering Suppression[C]","author":"chen","year":"0","journal-title":"2019 IEEE International Solid-State Circuits Conference-(ISSCC)"},{"doi-asserted-by":"publisher","key":"ref12","DOI":"10.1109\/ISSCC.2016.7418027"},{"doi-asserted-by":"publisher","key":"ref13","DOI":"10.1109\/JSSC.2016.2550498"},{"key":"ref14","first-page":"386","article-title":"A 3-to-40V VIN 10-to-50MHz 12W isolated GaN driver with self-excited tdead minimizer achieving 0.2ns\/0.3ns tdead, 7.9% minimum duty ratio and 50V\/ns CMTI[C]","author":"ke","year":"0","journal-title":"2018 IEEE Int Solid State Circuits Conf"},{"doi-asserted-by":"publisher","key":"ref4","DOI":"10.1109\/TCSI.2018.2878668"},{"doi-asserted-by":"publisher","key":"ref3","DOI":"10.1109\/ISPSD.2018.8393676"},{"doi-asserted-by":"publisher","key":"ref6","DOI":"10.1109\/ISPSD.2019.8757625"},{"key":"ref5","first-page":"1","article-title":"16.7A 20V 8.4 W 20MHz four-phase GaN DC-DC converter with fully on-chip dual-SR bootstrapped GaN FET driver achieving 4ns constant propagation delay and 1ns switching rise time[C]","author":"song","year":"2015","journal-title":"2015 IEEE International Solid-State Circuits Conference-(ISSCC) Digest of Technical Papers"},{"doi-asserted-by":"publisher","key":"ref8","DOI":"10.1109\/TPEL.2010.2047734"},{"key":"ref7","first-page":"120c","article-title":"A 10MHz 5-to-40V EMI-regulated GaN power driver with closed-loop adaptive miller plateau sensing[C]","author":"chen","year":"0","journal-title":"2017 Symposium on VLSI Circuits"},{"doi-asserted-by":"publisher","key":"ref2","DOI":"10.1109\/TIE.2017.2750615"},{"doi-asserted-by":"publisher","key":"ref1","DOI":"10.1002\/9781118844779"},{"doi-asserted-by":"publisher","key":"ref9","DOI":"10.1109\/TPEL.2013.2266103"}],"event":{"name":"2019 IEEE 13th International Conference on ASIC (ASICON)","start":{"date-parts":[[2019,10,29]]},"location":"Chongqing, China","end":{"date-parts":[[2019,11,1]]}},"container-title":["2019 IEEE 13th International Conference on ASIC (ASICON)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8963812\/8983425\/08983566.pdf?arnumber=8983566","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,8,19]],"date-time":"2025-08-19T18:11:12Z","timestamp":1755627072000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8983566\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,10]]},"references-count":14,"URL":"https:\/\/doi.org\/10.1109\/asicon47005.2019.8983566","relation":{},"subject":[],"published":{"date-parts":[[2019,10]]}}}