{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,8,23]],"date-time":"2025-08-23T01:10:10Z","timestamp":1755911410455,"version":"3.44.0"},"reference-count":16,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,10,1]],"date-time":"2019-10-01T00:00:00Z","timestamp":1569888000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,10,1]],"date-time":"2019-10-01T00:00:00Z","timestamp":1569888000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,10]]},"DOI":"10.1109\/asicon47005.2019.8983626","type":"proceedings-article","created":{"date-parts":[[2020,2,7]],"date-time":"2020-02-07T01:04:26Z","timestamp":1581037466000},"page":"1-4","source":"Crossref","is-referenced-by-count":0,"title":["Rapid Growth of SiO2 on SiC with Low D<sub>it<\/sub>using High Pressure Microwave Oxygen Plasma"],"prefix":"10.1109","author":[{"given":"Shengkai","family":"Wang","sequence":"first","affiliation":[{"name":"Institute of Microelectronics of Chinese Academy of Sciences,Beijing,China,100029"}]},{"given":"Jilong","family":"Hao","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics of Chinese Academy of Sciences,Beijing,China,100029"}]},{"given":"Nannan","family":"You","sequence":"additional","affiliation":[{"name":"University of Chinese Academy of Sciences,Beijing,China,100049"}]},{"given":"Yun","family":"Bai","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics of Chinese Academy of Sciences,Beijing,China,100029"}]},{"given":"Xinyu","family":"Liu","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics of Chinese Academy of Sciences,Beijing,China,100029"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1063\/1.3475990"},{"key":"ref11","first-page":"646","author":"toriumi","year":"2011","journal-title":"IEDM"},{"journal-title":"isotope tracing results (submitted)","year":"0","author":"liu","key":"ref12"},{"key":"ref13","doi-asserted-by":"crossref","first-page":"295","DOI":"10.1116\/1.583316","volume":"4","author":"roppel","year":"0","journal-title":"J Vac Sci Technol B Microelectron Process Phenom"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2565665"},{"key":"ref15","first-page":"123","author":"kita","year":"2017","journal-title":"ECS Trans Gallium Nitride Silicon Carbide Power Technol"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.3938\/jkps.72.166"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1063\/1.118773"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1088\/0022-3727\/40\/20\/S09"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1149\/05003.0257ecst"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1063\/1.126103"},{"key":"ref8","first-page":"1105","volume":"389 3","author":"satoh","year":"0","journal-title":"Silicon Carbide and Related Materials 2001 Pts 1 and 2 Proceedings"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1016\/S0167-9317(97)00018-X"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1111\/j.1551-2916.2005.00357.x"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1557\/mrs2005.73"},{"key":"ref9","doi-asserted-by":"crossref","first-page":"34945","DOI":"10.1038\/srep34945","author":"kim","year":"2016","journal-title":"Sci Rep"}],"event":{"name":"2019 IEEE 13th International Conference on ASIC (ASICON)","start":{"date-parts":[[2019,10,29]]},"location":"Chongqing, China","end":{"date-parts":[[2019,11,1]]}},"container-title":["2019 IEEE 13th International Conference on ASIC (ASICON)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8963812\/8983425\/08983626.pdf?arnumber=8983626","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,8,23]],"date-time":"2025-08-23T00:45:12Z","timestamp":1755909912000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8983626\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,10]]},"references-count":16,"URL":"https:\/\/doi.org\/10.1109\/asicon47005.2019.8983626","relation":{},"subject":[],"published":{"date-parts":[[2019,10]]}}}