{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,5]],"date-time":"2024-09-05T23:12:48Z","timestamp":1725577968006},"reference-count":14,"publisher":"IEEE","license":[{"start":{"date-parts":[[2021,10,26]],"date-time":"2021-10-26T00:00:00Z","timestamp":1635206400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2021,10,26]],"date-time":"2021-10-26T00:00:00Z","timestamp":1635206400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2021,10,26]],"date-time":"2021-10-26T00:00:00Z","timestamp":1635206400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2021,10,26]]},"DOI":"10.1109\/asicon52560.2021.9620384","type":"proceedings-article","created":{"date-parts":[[2021,12,1]],"date-time":"2021-12-01T15:53:36Z","timestamp":1638374016000},"page":"1-4","source":"Crossref","is-referenced-by-count":0,"title":["The study of parameters variation of nMOSFET affected by the HCI"],"prefix":"10.1109","author":[{"given":"Zhang","family":"XiaoWen","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Lin","family":"XiaoLing","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Gao","family":"Rui","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","first-page":"1","article-title":"The Reliability Evaluation and Control of microelectronics process","author":"xuedong","year":"2004","journal-title":"Electronic Product Reliability and Environmental Testing"},{"key":"ref11","article-title":"Developing Aged SPICE Model for Hot Carrier Reliability Simulation","author":"ye","year":"2000","journal-title":"IRW"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2018.8353652"},{"key":"ref13","first-page":"31","article-title":"Systematical Study of 14nm FinFET Reliability: From Device level stress to Product HTOL","author":"liu","year":"2015","journal-title":"IEEE IRPS"},{"journal-title":"JEDEC Solid state Technology Association","article-title":"Standard for Lognormal Analysis of Uncensored data, and of singly Right-Censored Data Utilizing the Persson and Rootzen Method","year":"1992","key":"ref14"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/16.8794"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1985.21952"},{"key":"ref6","first-page":"979","article-title":"The Reliability Study of 0.13?m CMOS Process","author":"zhang","year":"2014","journal-title":"ICRMS"},{"key":"ref5","first-page":"289","article-title":"Unified model for n-channel Hot-Carrier Degradation under Different Degradation Mechanisms [A]","author":"pages","year":"1996","journal-title":"Dallas IEEE\/IRPS[c]"},{"key":"ref8","first-page":"60","article-title":"The effect of hot carrier degradation on the MOS devices","author":"xiaowen","year":"2002","journal-title":"Electronic Product Reliability and Environmental Testing"},{"key":"ref7","first-page":"119","article-title":"The HCI Effect Reliability Evaluation of CMOS Process","author":"zhang","year":"2014","journal-title":"EDSSC"},{"journal-title":"JEDEC Solid state Technology Association","article-title":"N-Channel MOSFET Hot Carrier Data. Analysis","year":"2001","key":"ref2"},{"journal-title":"JEDEC Solid state Technology Association","article-title":"Procedure for Measuring N-Channel MOSFET Hot-Carrier-Induced Degradation under DC Stress","year":"2001","key":"ref1"},{"key":"ref9","first-page":"33","article-title":"The Reliabilityaffect of Hot Carrier Effect on the n-MOSFETs","author":"weiling","year":"2003","journal-title":"Journal of South China University of Technology"}],"event":{"name":"2021 IEEE 14th International Conference on ASIC (ASICON)","start":{"date-parts":[[2021,10,26]]},"location":"Kunming, China","end":{"date-parts":[[2021,10,29]]}},"container-title":["2021 IEEE 14th International Conference on ASIC (ASICON)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9620208\/9620199\/09620384.pdf?arnumber=9620384","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,5,10]],"date-time":"2022-05-10T12:53:37Z","timestamp":1652187217000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9620384\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,10,26]]},"references-count":14,"URL":"https:\/\/doi.org\/10.1109\/asicon52560.2021.9620384","relation":{},"subject":[],"published":{"date-parts":[[2021,10,26]]}}}