{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,3]],"date-time":"2025-12-03T17:43:58Z","timestamp":1764783838215,"version":"3.28.0"},"reference-count":36,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2016,1]]},"DOI":"10.1109\/aspdac.2016.7428103","type":"proceedings-article","created":{"date-parts":[[2016,3,10]],"date-time":"2016-03-10T21:48:08Z","timestamp":1457646488000},"page":"761-768","source":"Crossref","is-referenced-by-count":6,"title":["Flexible transition metal dichalcogenide field-effect transistors: A circuit-level simulation study of delay and power under bending, process variation, and scaling"],"prefix":"10.1109","author":[{"given":"Ying-Yu","family":"Chen","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Morteza","family":"Gholipour","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Deming","family":"Chen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1021\/nl4014748"},{"key":"ref32","article-title":"VLSI Circuit Simulation and Optimization","author":"litovski","year":"1997","journal-title":"Springer Science & Business Media"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1016\/S0080-8784(08)60267-7"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/16.974760"},{"journal-title":"Predictive Technology Model","year":"2014","key":"ref36"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1021\/nl4013166"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1021\/nn301320r"},{"key":"ref10","article-title":"Analytical SPICE-compatible model of Schottky-barrier-type GNRFETs With performance analysis","author":"gholipour","year":"2015","journal-title":"Trans VLSI"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2015.2469647"},{"key":"ref12","article-title":"Ballistic performance comparison of monolayer transition metal dichalcogenide MoS2 (M= Mo, W; X= S, Se, Te) metal-oxide-semiconductor field effect transistors","author":"chang","year":"2014","journal-title":"Journal of Applied Physics"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1145\/2744769.2744782"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1063\/1.4770313"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1021\/nl301702r"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2365028"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2010.279"},{"key":"ref18","article-title":"High-performance few-layer-MoS2 field-effect-transistor with record low contact-resistance","author":"liu","year":"2013","journal-title":"International Electron Devices Meeting"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2013.30"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2008.02.150"},{"key":"ref4","article-title":"Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes","author":"yoon","year":"2013","journal-title":"Small"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1021\/nl400778q"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1021\/nl301335q"},{"key":"ref6","doi-asserted-by":"crossref","DOI":"10.1126\/science.1154367","article-title":"Stretchable and Foldable Silicon Integrated Circuits","volume":"320","author":"kim","year":"2008","journal-title":"Sience"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1142\/S012915641350002X"},{"key":"ref5","doi-asserted-by":"crossref","DOI":"10.1021\/nn402954e","article-title":"Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures","author":"lee","year":"2013","journal-title":"ACS Nano"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2007.901680"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1002\/smll.201201224"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1021\/nn401429w"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2100045"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1038\/nmat2896"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.909030"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1021\/nl2018178"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2014.2328782"},{"journal-title":"Fundamentals of Modern VLSI Devices","year":"2010","author":"taur","key":"ref24"},{"key":"ref23","article-title":"Notes on Fermi-Dirac integrals","author":"kim","year":"2008","journal-title":"ArXiv"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1021\/nn303513c"},{"article-title":"Small-geometry MOS transistors: physics and modeling of surface-and buried-channel MOSFETs","year":"1985","author":"nguyen","key":"ref25"}],"event":{"name":"2016 21st Asia and South Pacific Design Automation Conference (ASP-DAC)","start":{"date-parts":[[2016,1,25]]},"location":"Macao, Macao","end":{"date-parts":[[2016,1,28]]}},"container-title":["2016 21st Asia and South Pacific Design Automation Conference (ASP-DAC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7422345\/7427971\/7428103.pdf?arnumber=7428103","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,9,5]],"date-time":"2019-09-05T12:06:49Z","timestamp":1567685209000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7428103\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,1]]},"references-count":36,"URL":"https:\/\/doi.org\/10.1109\/aspdac.2016.7428103","relation":{},"subject":[],"published":{"date-parts":[[2016,1]]}}}