{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,8]],"date-time":"2024-09-08T00:31:46Z","timestamp":1725755506778},"reference-count":6,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,11]]},"DOI":"10.1109\/asscc.2018.8579323","type":"proceedings-article","created":{"date-parts":[[2019,1,8]],"date-time":"2019-01-08T17:59:07Z","timestamp":1546970347000},"page":"127-128","source":"Crossref","is-referenced-by-count":2,"title":["A 28mn 320Kb TCAM Macro with Sub-0.8ns Search Time and 3.5+x Improvement in Delay-Area-Energy Product using Split-Controlled Single-Load 14T Cell"],"prefix":"10.1109","author":[{"given":"Cheng-Xin","family":"Xue","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wei-Cheng","family":"Zhao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Tzu-Hsien","family":"Yang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yi-Ju","family":"Chen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hiroyuki","family":"Yamauchi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Meng-Fan","family":"Chang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","first-page":"314","article-title":"A 28nm 256Kb 6T-SRAM with 280mV Improvement in VMIN Using a DualSplit-Control Assist Scheme","author":"chang","year":"2015","journal-title":"ISSCC"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2014.6757417"},{"key":"ref6","first-page":"136","article-title":"A 256b-Wordlength ReRAM-based TCAM with Ins Search-Time and 14x Improvement in WordLength-EnergyEfficiency-Density Product using 2.5T1R cell","author":"lin","year":"2016","journal-title":"ISSCC"},{"key":"ref5","first-page":"318","article-title":"A 3T1R Nonvolatile TCAM Using MLC ReRAM with Sub-Ins Search Time","author":"chang","year":"2015","journal-title":"ISSCC"},{"key":"ref2","first-page":"274","article-title":"1.8 Mbit\/mm2 Temary-CAM macro with 484 ps Search Access Time in 16 nm Fin-FET Bulk CMOS Technology","author":"tsukamoto","year":"2015","journal-title":"IEEE Symp VLSI Circuits"},{"key":"ref1","first-page":"212","article-title":"1.4Gsearch\/s 2Mb\/mm2 TCAM Using Two-Phase-Precharge ML Sensing and Power-Grid Pre-Conditioning to Reduce Ldi\/dt Power-Supply Noise by 50%","author":"arsovski","year":"2017","journal-title":"ISSCC"}],"event":{"name":"2018 IEEE Asian Solid-State Circuits Conference (A-SSCC)","start":{"date-parts":[[2018,11,5]]},"location":"Tainan, Taiwan","end":{"date-parts":[[2018,11,7]]}},"container-title":["2018 IEEE Asian Solid-State Circuits Conference (A-SSCC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8547238\/8579249\/08579323.pdf?arnumber=8579323","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,8,24]],"date-time":"2020-08-24T02:01:50Z","timestamp":1598234510000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8579323\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,11]]},"references-count":6,"URL":"https:\/\/doi.org\/10.1109\/asscc.2018.8579323","relation":{},"subject":[],"published":{"date-parts":[[2018,11]]}}}