{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,6]],"date-time":"2026-06-06T16:45:30Z","timestamp":1780764330887,"version":"3.54.1"},"reference-count":11,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,10]]},"DOI":"10.1109\/bcicts.2018.8550924","type":"proceedings-article","created":{"date-parts":[[2018,12,8]],"date-time":"2018-12-08T00:53:02Z","timestamp":1544230382000},"page":"164-167","source":"Crossref","is-referenced-by-count":13,"title":["8.6-13.6 mW Series-Connected Power Amplifiers Designed at 325 GHz Using 130 nm InP HBT Technology"],"prefix":"10.1109","author":[{"given":"Ahmed S.H.","family":"Ahmed","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Arda","family":"Simsek","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Miguel","family":"Urteaga","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mark J.W.","family":"Rodwell","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1049\/el.2013.3288"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2010.2050105"},{"key":"ref10","article-title":"204GHz Stacked-power amplifiers designed by a novel two-port technique","author":"ahmed","year":"0","journal-title":"European Microwave Conference 2018"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/CSICS.2014.6978528"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/CSICS.2017.8240463"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TTHZ.2014.2387259"},{"key":"ref8","first-page":"1","article-title":"A 22 dBm, 0.6 mm² D-Band SiGe HBT power amplifier using series power combining sub-quarter-wavelength baluns","author":"daneshgar","year":"2015","journal-title":"2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/SIRF.2016.7445485"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/CSICS.2015.7314458"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2013.2247698"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2015.2451360"}],"event":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","location":"San Diego, CA","start":{"date-parts":[[2018,10,15]]},"end":{"date-parts":[[2018,10,17]]}},"container-title":["2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8536738\/8550831\/08550924.pdf?arnumber=8550924","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,8,24]],"date-time":"2020-08-24T00:31:13Z","timestamp":1598229073000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8550924\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,10]]},"references-count":11,"URL":"https:\/\/doi.org\/10.1109\/bcicts.2018.8550924","relation":{},"subject":[],"published":{"date-parts":[[2018,10]]}}}