{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,6]],"date-time":"2024-09-06T21:13:47Z","timestamp":1725657227685},"reference-count":17,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,10]]},"DOI":"10.1109\/bcicts.2018.8551061","type":"proceedings-article","created":{"date-parts":[[2018,12,8]],"date-time":"2018-12-08T00:53:02Z","timestamp":1544230382000},"page":"210-214","source":"Crossref","is-referenced-by-count":4,"title":["SiGe HBT PA Design for 5G (28 GHz and Beyond) - Modeling and Design Challenges"],"prefix":"10.1109","author":[{"given":"Mark P.","family":"van der Heijden","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Andries J.","family":"Scholten","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/RFIC.2016.7508317"},{"key":"ref11","first-page":"37","article-title":"Unilfied Electro-Thermal S tability Criterion for Bipolar Transistors","author":"vanhoucke","year":"0","journal-title":"Proc BCTM2005"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2006.873848"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/BCTM.2012.6352624"},{"key":"ref14","first-page":"180","article-title":"Design and analyses of bias current circuits for operation at output voltages above BVCEO","author":"veenstra","year":"0","journal-title":"proc BCTM2004"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2002.805566"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/BMAS.2007.4437525"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2009.2025029"},{"key":"ref4","first-page":"143","article-title":"A 27GHz, 31dBm Power Amplifier in a 0.25um SiGe:C BiCMOS technology","author":"essing","year":"0","journal-title":"Proc BCTM2014"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2012.2201275"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2016.2636842"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2014.2353800"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2002.801198"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2003.1210923"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2018.2791481"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2017.2766211"},{"year":"0","key":"ref9"}],"event":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","start":{"date-parts":[[2018,10,15]]},"location":"San Diego, CA","end":{"date-parts":[[2018,10,17]]}},"container-title":["2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8536738\/8550831\/08551061.pdf?arnumber=8551061","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,8,24]],"date-time":"2020-08-24T00:31:31Z","timestamp":1598229091000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8551061\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,10]]},"references-count":17,"URL":"https:\/\/doi.org\/10.1109\/bcicts.2018.8551061","relation":{},"subject":[],"published":{"date-parts":[[2018,10]]}}}