{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,29]],"date-time":"2024-10-29T10:54:18Z","timestamp":1730199258530,"version":"3.28.0"},"reference-count":21,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,10]]},"DOI":"10.1109\/bcicts.2018.8551078","type":"proceedings-article","created":{"date-parts":[[2018,12,8]],"date-time":"2018-12-08T00:53:02Z","timestamp":1544230382000},"page":"219-222","source":"Crossref","is-referenced-by-count":1,"title":["Modeling High-Current Effects in Bipolar Transistors: A Theory Review"],"prefix":"10.1109","author":[{"given":"M.","family":"Schroter","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S.","family":"Falk","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"crossref","first-page":"257","DOI":"10.1109\/T-ED.1973.17638","article-title":"high current regimes in transistor collector regions","volume":"20","author":"bowler","year":"1973","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1975.18264"},{"journal-title":"Semiconductor Device Modeling With SPICE","year":"1988","author":"antognetti","key":"ref12"},{"key":"ref13","first-page":"250","author":"schr\u00f6ter","year":"1989","journal-title":"Transit time of high-speed bipolar transistors in dependence on operating point technological parameters and temperature"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/16.121699"},{"journal-title":"Handbook of III-V Heterojunction Bipolar Transistors","year":"1998","author":"liu","key":"ref15"},{"journal-title":"Fundamentals of Modern VLSI Devices","year":"1998","author":"taur","key":"ref16"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-7091-9043-2"},{"journal-title":"Silicon-Germanium Heterojunction Bipolar Transistors","year":"2003","author":"cressler","key":"ref18"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/4.540059"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1962.14965"},{"key":"ref3","first-page":"60","author":"schr\u00f6ter","year":"2018","journal-title":"SiGe HBT technology for sub-mm-wave electronics State-of-the-art and future prospects"},{"journal-title":"Physics of Semiconductors","year":"1964","author":"moll","key":"ref6"},{"key":"ref5","first-page":"333","article-title":"Effects in mesa transistors at high current densities","volume":"15","author":"r\u00fcchardt","year":"1962","journal-title":"NTZ"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1002\/j.1538-7305.1970.tb01803.x"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(68)90085-3"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2017.2669087"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2015.2500024"},{"key":"ref9","doi-asserted-by":"crossref","first-page":"39","DOI":"10.1109\/T-ED.1969.16564","article-title":"current gain and cutoff frequency falloff at high currents","volume":"16","author":"whittier","year":"1969","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref20","article-title":"Compact hierarchical modeling of bipolar transistors with HICUM","author":"schr\u00f6ter","year":"2010","journal-title":"World Scientific"},{"journal-title":"private communication","year":"2018","author":"zampardi","key":"ref21"}],"event":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","start":{"date-parts":[[2018,10,15]]},"location":"San Diego, CA","end":{"date-parts":[[2018,10,17]]}},"container-title":["2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8536738\/8550831\/08551078.pdf?arnumber=8551078","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,8,24]],"date-time":"2020-08-24T04:53:48Z","timestamp":1598244828000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8551078\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,10]]},"references-count":21,"URL":"https:\/\/doi.org\/10.1109\/bcicts.2018.8551078","relation":{},"subject":[],"published":{"date-parts":[[2018,10]]}}}