{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,7]],"date-time":"2024-09-07T16:31:47Z","timestamp":1725726707121},"reference-count":7,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,11,1]],"date-time":"2019-11-01T00:00:00Z","timestamp":1572566400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,11,1]],"date-time":"2019-11-01T00:00:00Z","timestamp":1572566400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,11,1]],"date-time":"2019-11-01T00:00:00Z","timestamp":1572566400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,11]]},"DOI":"10.1109\/bcicts45179.2019.8972749","type":"proceedings-article","created":{"date-parts":[[2020,1,31]],"date-time":"2020-01-31T05:16:05Z","timestamp":1580447765000},"page":"1-4","source":"Crossref","is-referenced-by-count":9,"title":["A High Efficiency, Ka-Band, GaN-on-SiC MMIC with Low Compression"],"prefix":"10.1109","author":[{"given":"Bruce","family":"Schmukler","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jeffrey","family":"Barner","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jeremy","family":"Fisher","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Don A.","family":"Gajewski","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Scott T.","family":"Sheppard","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jim W.","family":"Milligan","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kyle M.","family":"Bothe","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Satyaki","family":"Ganguly","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Terry","family":"Alcorn","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jennifer","family":"Gao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chris","family":"Hardiman","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Evan","family":"Jones","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Dan","family":"Namishia","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fabian","family":"Radulescu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2015.7166776"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/COMCAS.2013.6685246"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/CSICS.2016.7751021"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/EuMIC.2015.7345119"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/BCICTS.2018.8551075"},{"key":"ref2","article-title":"An Optical 0.25 um GaN HEMT Technology on 100 mm SiC for RF Discrete and Foundry MMIC Products","author":"wood","year":"2013","journal-title":"2013 CS MANTECH TECHNICAL DIGEST"},{"key":"ref1","article-title":"Optically-Defined 150-nm, 28-V GaN HEMT Process for Ka-Band","author":"bothe","year":"2019","journal-title":"2019 CS MANTECH TECHNICAL DIGEST"}],"event":{"name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","start":{"date-parts":[[2019,11,3]]},"location":"Nashville, TN, USA","end":{"date-parts":[[2019,11,6]]}},"container-title":["2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8961327\/8972708\/08972749.pdf?arnumber=8972749","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,17]],"date-time":"2022-07-17T21:49:54Z","timestamp":1658094594000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8972749\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,11]]},"references-count":7,"URL":"https:\/\/doi.org\/10.1109\/bcicts45179.2019.8972749","relation":{},"subject":[],"published":{"date-parts":[[2019,11]]}}}