{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,1]],"date-time":"2025-11-01T09:33:07Z","timestamp":1761989587211},"reference-count":16,"publisher":"IEEE","license":[{"start":{"date-parts":[[2020,11,16]],"date-time":"2020-11-16T00:00:00Z","timestamp":1605484800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2020,11,16]],"date-time":"2020-11-16T00:00:00Z","timestamp":1605484800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2020,11,16]],"date-time":"2020-11-16T00:00:00Z","timestamp":1605484800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2020,11,16]]},"DOI":"10.1109\/bcicts48439.2020.9392903","type":"proceedings-article","created":{"date-parts":[[2021,4,9]],"date-time":"2021-04-09T20:10:07Z","timestamp":1617999007000},"source":"Crossref","is-referenced-by-count":14,"title":["Ultra-high Speed InP\/GaAsSb-based Type-II Double-heterojunction Bipolar Transistors and Transfer Technology onto SiC Substrate"],"prefix":"10.1109","author":[{"given":"Yuta","family":"Shiratori","sequence":"first","affiliation":[]},{"given":"Takuya","family":"Hoshi","sequence":"additional","affiliation":[]},{"given":"Hideaki","family":"Matsuzaki","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","first-page":"1","article-title":"Pseudomorphic InP\/InGaAs heterojunction bipolar transistors (PHBTs) experimentally demonstrating fT = 765 GHz at 25°C increasing to fT= 845 GHz at ?55°C","author":"snodgrass","year":"2006","journal-title":"IEDM Tech Dig"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.7567\/APEX.6.034001"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838503"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.23919\/LTB-3D.2019.8735272"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/ICEPT.2009.5270698"},{"key":"ref15","first-page":"363","article-title":"Thermal-Electrical Properties","author":"liu","year":"1998","journal-title":"Handbook of III-V Heterojunction Bipolar Transistors"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1049\/el.2015.1135"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.7567\/APEX.7.114102"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1049\/el:19750060"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1587\/elex.16.20181125"},{"key":"ref5","article-title":"Low- Thermal-Resistance InP\/GaAsSb DHBTs with a Metal Subcollector Fabricated with Surface-Activated Bonding","author":"shiratori","year":"0","journal-title":"Compound Semiconductor Week 2015 27th International Conference on Indium Phosphide and Related Materials (IPRM 2015) Tu1E2 5"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2014.2365216"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1587\/transele.E99.C.522"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2241067"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2007.911058"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2020.2982497"}],"event":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","location":"Monterey, CA, USA","start":{"date-parts":[[2020,11,16]]},"end":{"date-parts":[[2020,11,19]]}},"container-title":["2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9392908\/9392902\/09392903.pdf?arnumber=9392903","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,6,27]],"date-time":"2022-06-27T15:57:15Z","timestamp":1656345435000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9392903\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,11,16]]},"references-count":16,"URL":"https:\/\/doi.org\/10.1109\/bcicts48439.2020.9392903","relation":{},"subject":[],"published":{"date-parts":[[2020,11,16]]}}}