{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,6]],"date-time":"2024-09-06T20:36:31Z","timestamp":1725654991778},"reference-count":13,"publisher":"IEEE","license":[{"start":{"date-parts":[[2020,11,16]],"date-time":"2020-11-16T00:00:00Z","timestamp":1605484800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2020,11,16]],"date-time":"2020-11-16T00:00:00Z","timestamp":1605484800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2020,11,16]],"date-time":"2020-11-16T00:00:00Z","timestamp":1605484800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2020,11,16]]},"DOI":"10.1109\/bcicts48439.2020.9392968","type":"proceedings-article","created":{"date-parts":[[2021,4,9]],"date-time":"2021-04-09T20:10:07Z","timestamp":1617999007000},"page":"1-4","source":"Crossref","is-referenced-by-count":1,"title":["A Ku-band 70-W Class GaN Internally Matched High Power Amplifier with Wide Offset Frequencies of up to 400 MHz for Multi-Carrier Satellite Communications"],"prefix":"10.1109","author":[{"given":"Takaaki","family":"Yoshioka","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kenji","family":"Harauchi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Takumi","family":"Sugitani","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Takashi","family":"Yamasaki","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hiroaki","family":"Ichinohe","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Miyo","family":"Miyashita","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kazuya","family":"Yamamoto","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Seiki","family":"Goto","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"journal-title":"MGFK48G3745 data sheet","year":"0","key":"ref10"},{"journal-title":"SGK1314-60A data sheet","year":"0","key":"ref11"},{"journal-title":"TGA2239-CP data sheet","year":"0","key":"ref12"},{"journal-title":"TGI1314-50LA data sheet","year":"0","key":"ref13"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.23919\/APMC.2018.8617414"},{"key":"ref3","first-page":"568","article-title":"60% PAE, 30 W X-band and 33% PAE, 100 W Ku-band PAs utilizing 0.15 µm GaN HEMT technology","author":"torii","year":"0","journal-title":"46th European Microwave Conference (EuMC)"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2003.808704"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/GLOCOM.2017.8255099"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2009.5165965"},{"journal-title":"CMPA1D1E080F data sheet","year":"0","key":"ref7"},{"key":"ref2","first-page":"1","article-title":"An 80- W packaged GaN high power amplifier for CW operation in the 13.75-14.5 GHz band","author":"imai","year":"0","journal-title":"IEEE MTT-S International Microwave Symposium (IMS)"},{"key":"ref1","first-page":"457","article-title":"Ku-band AIGaN\/GaN-HEMT with over 30% of PAE","author":"takagi","year":"0","journal-title":"IEEE MTT-S International Microwave Symposium (IMS)"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2017.8058826"}],"event":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","start":{"date-parts":[[2020,11,16]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2020,11,19]]}},"container-title":["2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9392908\/9392902\/09392968.pdf?arnumber=9392968","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,6,27]],"date-time":"2022-06-27T15:57:15Z","timestamp":1656345435000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9392968\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,11,16]]},"references-count":13,"URL":"https:\/\/doi.org\/10.1109\/bcicts48439.2020.9392968","relation":{},"subject":[],"published":{"date-parts":[[2020,11,16]]}}}