{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,5]],"date-time":"2026-02-05T09:07:10Z","timestamp":1770282430010,"version":"3.49.0"},"reference-count":16,"publisher":"IEEE","license":[{"start":{"date-parts":[[2020,11,16]],"date-time":"2020-11-16T00:00:00Z","timestamp":1605484800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2020,11,16]],"date-time":"2020-11-16T00:00:00Z","timestamp":1605484800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2020,11,16]]},"DOI":"10.1109\/bcicts48439.2020.9392976","type":"proceedings-article","created":{"date-parts":[[2021,4,9]],"date-time":"2021-04-09T16:10:07Z","timestamp":1617984607000},"page":"1-4","source":"Crossref","is-referenced-by-count":8,"title":["230\u2013305 GHz, > 10-dBm-Output-Power Wideband Power Amplifier Using Low-Q Neutralization Technique in 60-nm InP-HEMT Technology"],"prefix":"10.1109","author":[{"given":"Hiroshi","family":"Hamada","sequence":"first","affiliation":[{"name":"NTT Device Technology Labs, NTT Corporation"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Takuya","family":"Tsutsumi","sequence":"additional","affiliation":[{"name":"NTT Device Technology Labs, NTT Corporation"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Adam","family":"Pander","sequence":"additional","affiliation":[{"name":"NTT Device Technology Labs, NTT Corporation"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Masahito","family":"Nakamura","sequence":"additional","affiliation":[{"name":"NTT Device Technology Labs, NTT Corporation"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Go","family":"Itami","sequence":"additional","affiliation":[{"name":"NTT Device Technology Labs, NTT Corporation"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hideaki","family":"Matsuzaki","sequence":"additional","affiliation":[{"name":"NTT Device Technology Labs, NTT Corporation"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hiroki","family":"Sugiyama","sequence":"additional","affiliation":[{"name":"NTT Device Technology Labs, NTT Corporation"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hideyuki","family":"Nosaka","sequence":"additional","affiliation":[{"name":"NTT Device Technology Labs, NTT Corporation"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2019.8700754"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2016.2626340"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2019.2908335"},{"key":"ref13","article-title":"475-GHz 20-dB-Gain InP-HEMT Power Amplifier Using Neutralized Common-Source Architecture","author":"hamada","year":"0","journal-title":"IEEE MTT-S Int Microw Symp Dig"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2928849"},{"key":"ref15","first-page":"2","article-title":"Millimeter-wave InP device technologies for ultrahigh speed wireless communications toward beyond 5G","author":"hamada","year":"2019","journal-title":"IEDM Tech Dig"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2015.2451360"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2020.2986196"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2019.2899487"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2018.8439850"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TTHZ.2020.2977331"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2020.3005818"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/BCICTS45179.2019.8972756"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2019.2944855"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/MVT.2018.2848498"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TTHZ.2020.2965808"}],"event":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","location":"Monterey, CA, USA","start":{"date-parts":[[2020,11,16]]},"end":{"date-parts":[[2020,11,19]]}},"container-title":["2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9392908\/9392902\/09392976.pdf?arnumber=9392976","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,10]],"date-time":"2025-10-10T17:35:44Z","timestamp":1760117744000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9392976\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,11,16]]},"references-count":16,"URL":"https:\/\/doi.org\/10.1109\/bcicts48439.2020.9392976","relation":{},"subject":[],"published":{"date-parts":[[2020,11,16]]}}}