{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,31]],"date-time":"2026-03-31T14:14:56Z","timestamp":1774966496523,"version":"3.50.1"},"reference-count":18,"publisher":"IEEE","license":[{"start":{"date-parts":[[2024,10,27]],"date-time":"2024-10-27T00:00:00Z","timestamp":1729987200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,10,27]],"date-time":"2024-10-27T00:00:00Z","timestamp":1729987200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2024,10,27]]},"DOI":"10.1109\/bcicts59662.2024.10745667","type":"proceedings-article","created":{"date-parts":[[2024,11,12]],"date-time":"2024-11-12T18:35:38Z","timestamp":1731436538000},"page":"18-21","source":"Crossref","is-referenced-by-count":2,"title":["High-Performance SiGe Heterojunction Phototransistor in a Commercial SiGe BiCMOS Platform for Free-Space Optical Receivers"],"prefix":"10.1109","author":[{"given":"Mozhgan","family":"Hosseinzadeh","sequence":"first","affiliation":[{"name":"Georgia Institute of Technology, 777 Atlantic Drive, N.W,Atlanta,GA,USA,30332-0250"}]},{"given":"Milad","family":"Frounchi","sequence":"additional","affiliation":[{"name":"Georgia Institute of Technology, 777 Atlantic Drive, N.W,Atlanta,GA,USA,30332-0250"}]},{"given":"George N.","family":"Tzintzarov","sequence":"additional","affiliation":[{"name":"Georgia Institute of Technology, 777 Atlantic Drive, N.W,Atlanta,GA,USA,30332-0250"}]},{"given":"Jeffrey W.","family":"Teng","sequence":"additional","affiliation":[{"name":"Georgia Institute of Technology, 777 Atlantic Drive, N.W,Atlanta,GA,USA,30332-0250"}]},{"given":"John D.","family":"Cressler","sequence":"additional","affiliation":[{"name":"Georgia Institute of Technology, 777 Atlantic Drive, N.W,Atlanta,GA,USA,30332-0250"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JLT.2022.3215590"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JLT.2018.2889252"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1364\/OE.23.009369"},{"key":"ref4","doi-asserted-by":"crossref","first-page":"75971","DOI":"10.1117\/12.847330","article-title":"Optical components for very short reach applications at 40Gb\/s and beyond","volume":"7597","author":"Ledentsov","year":"2010","journal-title":"Physics and Simulation of Optoelectronic Devices XVIII"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ICTON.2017.8024827"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1982.20694"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/LPT.2005.860060"},{"key":"ref8","article-title":"An SiGe\/Si heterojunction phototransistor for opto-microwave applications:modeling and first experimental results","volume":"20","author":"Polleux","year":"2003","journal-title":"GAAS"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/AERO50100.2021.9438467"},{"key":"ref10","first-page":"243","article-title":"Design and implementation of SiGe HPTs using an 80 GHz SiGe bipolar process technology","volume-title":"Group IV Photon.","author":"Rosales"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1017\/S1759078715001531"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2022.3200925"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1972.17391"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1016\/s0080-8784(08)62956-7"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/BCICTS48439.2020.9392985"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/JQE.2019.2917209"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/CLEO.2007.4453122"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1049\/el.2015.0062"}],"event":{"name":"2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","location":"Fort Lauderdale, FL, USA","start":{"date-parts":[[2024,10,27]]},"end":{"date-parts":[[2024,10,30]]}},"container-title":["2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/10745638\/10745653\/10745667.pdf?arnumber=10745667","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,4,23]],"date-time":"2025-04-23T17:50:06Z","timestamp":1745430606000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10745667\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,10,27]]},"references-count":18,"URL":"https:\/\/doi.org\/10.1109\/bcicts59662.2024.10745667","relation":{},"subject":[],"published":{"date-parts":[[2024,10,27]]}}}