{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,1]],"date-time":"2025-11-01T09:36:09Z","timestamp":1761989769370,"version":"3.29.0"},"reference-count":18,"publisher":"IEEE","license":[{"start":{"date-parts":[[2024,10,27]],"date-time":"2024-10-27T00:00:00Z","timestamp":1729987200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,10,27]],"date-time":"2024-10-27T00:00:00Z","timestamp":1729987200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2024,10,27]]},"DOI":"10.1109\/bcicts59662.2024.10745717","type":"proceedings-article","created":{"date-parts":[[2024,11,12]],"date-time":"2024-11-12T18:35:38Z","timestamp":1731436538000},"page":"274-277","source":"Crossref","is-referenced-by-count":4,"title":["On the Emitter Back-Injection Current in Advanced SiGe HBTs at Cryogenic Temperatures"],"prefix":"10.1109","author":[{"given":"Xiaodi","family":"Jin","sequence":"first","affiliation":[{"name":"Technische Universit&#x00E4;t,Chair for Electron Devices and Integrated Circuits,Dresden,Germany"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Prateek","family":"Kumar","sequence":"additional","affiliation":[{"name":"Technische Universit&#x00E4;t,Chair for Electron Devices and Integrated Circuits,Dresden,Germany"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Michael","family":"Schr\u00f6ter","sequence":"additional","affiliation":[{"name":"Technische Universit&#x00E4;t,Chair for Electron Devices and Integrated Circuits,Dresden,Germany"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"doi-asserted-by":"publisher","key":"ref1","DOI":"10.1109\/JMW.2020.3034071"},{"doi-asserted-by":"publisher","key":"ref2","DOI":"10.1103\/PhysRevA.57.120"},{"doi-asserted-by":"publisher","key":"ref3","DOI":"10.1109\/ISSCC.2017.7870244"},{"doi-asserted-by":"publisher","key":"ref4","DOI":"10.1149\/1.2355887"},{"doi-asserted-by":"publisher","key":"ref5","DOI":"10.1149\/1.3487560"},{"doi-asserted-by":"publisher","key":"ref6","DOI":"10.1109\/SSST.2011.5753786"},{"doi-asserted-by":"publisher","key":"ref7","DOI":"10.1088\/1742-6596\/2065\/1\/012013"},{"key":"ref8","first-page":"30.5.1","article-title":"SiGe HBT Technology with fT\/fmax of 300 GHz\/500 GHz and 2.0 ps CML Gate Delay","author":"Heinemann","year":"2010","journal-title":"IEEE IEDM Techn. Dig."},{"volume-title":"Charge Transport Phenomena in Cryogenic SiGe Heterojunction Bipolar Transistors Ph.D. thesis","year":"2024","author":"Naik","key":"ref9"},{"year":"2007","author":"Sze","article-title":"Physics of Semiconductor Devices","key":"ref10"},{"doi-asserted-by":"publisher","key":"ref11","DOI":"10.1142\/ISASSET"},{"doi-asserted-by":"publisher","key":"ref12","DOI":"10.1149\/1.2134410"},{"doi-asserted-by":"publisher","key":"ref13","DOI":"10.1109\/T-ED.1973.17642"},{"doi-asserted-by":"publisher","key":"ref14","DOI":"10.1016\/0038-1101(76)90043-5"},{"doi-asserted-by":"publisher","key":"ref15","DOI":"10.1109\/SIRF.2017.7874381"},{"key":"ref16","article-title":"Device Simulation of High-Performance SiGe Heterojunction Bipolar Transistors","volume-title":"Ph. D. thesis","author":"Korn","year":"2017"},{"doi-asserted-by":"publisher","key":"ref17","DOI":"10.1109\/JPROC.2015.2500024"},{"doi-asserted-by":"publisher","key":"ref18","DOI":"10.1109\/TED.2022.3223885"}],"event":{"name":"2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","start":{"date-parts":[[2024,10,27]]},"location":"Fort Lauderdale, FL, USA","end":{"date-parts":[[2024,10,30]]}},"container-title":["2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/10745638\/10745653\/10745717.pdf?arnumber=10745717","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,11,27]],"date-time":"2024-11-27T15:45:53Z","timestamp":1732722353000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10745717\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,10,27]]},"references-count":18,"URL":"https:\/\/doi.org\/10.1109\/bcicts59662.2024.10745717","relation":{},"subject":[],"published":{"date-parts":[[2024,10,27]]}}}