{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,22]],"date-time":"2024-10-22T20:49:30Z","timestamp":1729630170004,"version":"3.28.0"},"reference-count":30,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2012,4]]},"DOI":"10.1109\/ccece.2012.6335030","type":"proceedings-article","created":{"date-parts":[[2012,10,24]],"date-time":"2012-10-24T20:33:06Z","timestamp":1351110786000},"page":"1-4","source":"Crossref","is-referenced-by-count":0,"title":["Phase transition in sputtered HfO<inf>2<\/inf> thin films: A qualitative raman study"],"prefix":"10.1109","author":[{"given":"G. S.","family":"Belo","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"F.","family":"Nakagomi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"A.","family":"Minko","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S. W.","family":"da Silva","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"P. C.","family":"Morais","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"D. A.","family":"Buchanan","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"19","doi-asserted-by":"publisher","DOI":"10.1051\/epjap:2004206"},{"key":"17","doi-asserted-by":"publisher","DOI":"10.1201\/9781420034141"},{"key":"18","doi-asserted-by":"publisher","DOI":"10.1088\/0034-4885\/69\/2\/R02"},{"key":"15","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2003.812565"},{"key":"16","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2001.979537"},{"key":"13","doi-asserted-by":"publisher","DOI":"10.1116\/1.591472"},{"key":"14","doi-asserted-by":"publisher","DOI":"10.1147\/rd.433.0245"},{"key":"11","doi-asserted-by":"publisher","DOI":"10.1063\/1.124036"},{"key":"12","first-page":"477","article-title":"Physical characterization of ultrathin films of high dielectric constant materials on silicon","volume":"2000","author":"gusev","year":"2000","journal-title":"The Physics and Chemistry of SiO2 and the Si-SiO2 Interface"},{"key":"21","doi-asserted-by":"crossref","first-page":"72","DOI":"10.1016\/S0040-6090(02)00612-0","article-title":"Comparison of hafnium oxide films grown by atomic layer deposition from iodide and chloride precursors","volume":"416","author":"kukli","year":"2002","journal-title":"Thin Solid Films"},{"key":"20","volume":"1","author":"kim","year":"2006","journal-title":"Hf-Based High-k Dielectrics Process Development Performance Characterization and Reliability"},{"key":"22","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2006.06.005"},{"key":"23","doi-asserted-by":"crossref","first-page":"2434","DOI":"10.1016\/j.saa.2005.02.025","article-title":"Raman and Brillouin scattering spectroscopy studies of atomic layer-deposited ZrO2and HfO2 thin films","volume":"61","author":"tkachev","year":"2005","journal-title":"Spectrochimica Acta A"},{"key":"24","doi-asserted-by":"publisher","DOI":"10.1111\/j.1151-2916.2002.tb00346.x"},{"key":"25","doi-asserted-by":"publisher","DOI":"10.1134\/S1063783407100253"},{"key":"26","doi-asserted-by":"crossref","first-page":"9205","DOI":"10.1103\/PhysRevB.48.9205","article-title":"Pressure-induced phase transformations in HfO2to 50 GPa studied by Raman spectroscopy","volume":"48","author":"jayarama","year":"1993","journal-title":"Physical Review B"},{"key":"27","doi-asserted-by":"publisher","DOI":"10.1016\/S0040-6090(98)00542-2"},{"key":"28","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-642-01479-6"},{"key":"29","doi-asserted-by":"publisher","DOI":"10.1016\/0022-3697(75)90085-2"},{"key":"3","first-page":"477","article-title":"Physical characterization of ultrathin films of high dielectric constant materials on silicon","author":"gusev","year":"2000","journal-title":"The Physics and Chemistry of SiO2 and the Si-SiO2 Interface"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1007\/978-94-010-0944-7_21"},{"key":"10","doi-asserted-by":"publisher","DOI":"10.1063\/1.371888"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1385803"},{"key":"30","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.47.S1.2"},{"key":"7","article-title":"CMOS in the new millennium, Scaling the gate dielectric: Materials, integration and reliability","author":"buchanan","year":"1999","journal-title":"Next Generation Materials and Devices for Si-based Microelectronics"},{"key":"6","article-title":"Scaling the Gate Dielectric: Integration of High-k Gate Dielectrics CMOS Applications","author":"buchanan","year":"0","journal-title":"11th Canadian Semiconductor Technology Conference Ottawa Ontario 2003"},{"key":"5","first-page":"3","article-title":"Growth, characterization and the limits of ultrathin SiO2-based dielectrics for future CMOS applications","volume":"96","author":"buchanan","year":"1996","journal-title":"Physics and Chemistry of Sio(2) and the Si-Sio(2) Interface-3 1996"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1016\/S0167-9317(97)00007-5"},{"key":"9","doi-asserted-by":"publisher","DOI":"10.1063\/1.1361065"},{"key":"8","article-title":"Beyond Microelectronics: Materials and Technology for Nano-scale CMOS Devices","volume":"1","author":"buchanan","year":"2005","journal-title":"Physica Status Solidi"}],"event":{"name":"2012 25th IEEE Canadian Conference on Electrical and Computer Engineering (CCECE)","start":{"date-parts":[[2012,4,29]]},"location":"Montreal, QC","end":{"date-parts":[[2012,5,2]]}},"container-title":["2012 25th IEEE Canadian Conference on Electrical and Computer Engineering (CCECE)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/6329166\/6334811\/06335030.pdf?arnumber=6335030","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,21]],"date-time":"2017-06-21T01:50:36Z","timestamp":1498009836000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6335030\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2012,4]]},"references-count":30,"URL":"https:\/\/doi.org\/10.1109\/ccece.2012.6335030","relation":{},"subject":[],"published":{"date-parts":[[2012,4]]}}}