{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,7]],"date-time":"2024-09-07T15:28:59Z","timestamp":1725722939810},"reference-count":14,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2008,9]]},"DOI":"10.1109\/cicc.2008.4672017","type":"proceedings-article","created":{"date-parts":[[2008,11,25]],"date-time":"2008-11-25T15:46:18Z","timestamp":1227627978000},"page":"49-52","source":"Crossref","is-referenced-by-count":2,"title":["Inductor-based ESD protection under CDM-like ESD stress conditions for RF applications"],"prefix":"10.1109","author":[{"given":"S.","family":"Thijs","sequence":"first","affiliation":[]},{"given":"M.","family":"Okushima","sequence":"additional","affiliation":[]},{"given":"J.","family":"Borremans","sequence":"additional","affiliation":[]},{"given":"P.","family":"Jansen","sequence":"additional","affiliation":[]},{"given":"D.","family":"Linten","sequence":"additional","affiliation":[]},{"given":"M.","family":"Scholz","sequence":"additional","affiliation":[]},{"given":"P.","family":"Wambacq","sequence":"additional","affiliation":[]},{"given":"G.","family":"Groeseneken","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"13","doi-asserted-by":"publisher","DOI":"10.1109\/EOSESD.2007.4401736"},{"key":"14","doi-asserted-by":"publisher","DOI":"10.1109\/RFIC.2008.4561389"},{"key":"11","first-page":"285","article-title":"Ultra-thin gate oxide reliability in the esd time domain","author":"a ille","year":"2006","journal-title":"2006 Electrical Overstress\/Electrostatic Discharge Symposium eos\/esd"},{"key":"12","doi-asserted-by":"publisher","DOI":"10.1109\/EOSESD.2007.4401738"},{"key":"3","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2005.847490"},{"year":"0","key":"2"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2005.1568713"},{"key":"10","doi-asserted-by":"publisher","DOI":"10.1109\/EOSESD.2007.4401759"},{"journal-title":"Field-Induced Charged-Device Model Test Method for Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components","year":"0","key":"7"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1049\/el:20030221"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.1109\/SMELEC.2006.381007"},{"key":"4","first-page":"1","article-title":"Class 3 HBM and Class M4 MM ESD Protected 5.5 GHz LNA in 90 nm RFCMOS using Above-IC Inductor","author":"s thijs","year":"2005","journal-title":"2005 Electrical Overstress\/Electrostatic Discharge Symposium eos\/esd"},{"key":"9","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIC.2007.4342677"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1109\/3476.739177"}],"event":{"name":"2008 IEEE Custom Integrated Circuits Conference - CICC 2008","start":{"date-parts":[[2008,9,21]]},"location":"San Jose, CA, USA","end":{"date-parts":[[2008,9,24]]}},"container-title":["2008 IEEE Custom Integrated Circuits Conference"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/4665385\/4671999\/04672017.pdf?arnumber=4672017","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,16]],"date-time":"2017-03-16T14:19:29Z","timestamp":1489673969000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/4672017\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2008,9]]},"references-count":14,"URL":"https:\/\/doi.org\/10.1109\/cicc.2008.4672017","relation":{},"subject":[],"published":{"date-parts":[[2008,9]]}}}